Reactive ion etching of vertical GaN mesas by the addition...

Semiconductor Science and Technology 2001 / 06 Vol. 16; Iss. 6

Reactive ion etching of vertical GaN mesas by the addition of CH 4 to BCl 3 /H 2 /Ar inductively coupled plasma

Lee, Byung-Teak, Jung, S-Y, Lee, J-L, Park, Y-J, Paek, M C, Cho, K-I
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Volume:
16
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/16/6/309
Date:
June, 2001
File:
PDF, 241 KB
english, 2001
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