Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: the influence of strong impurity and defect scattering
Martinez, C E, Stanton, N M, Kent, A J, Williams, M L, Harrison, I, Tang, H, Webb, J B, Bardwell, J AVolume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/12/013
Date:
December, 2006
File:
PDF, 125 KB
english, 2006