Volume 21; Issue 12

Semiconductor Science and Technology

Volume 21; Issue 12

1

Overcharging of porous silicon localized states at gas adsorption

Skryshevsky, V A, Zinchuk, V M, Benilov, A I, Milovanov, Yu S, Tretyak, O V

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 126 KB

english, 2006

2

The optical, structural and morphological properties of ultrasonically sprayed ZnO:Mn films

Akyuz, I, Kose, S, Atay, F, Bilgin, V

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 508 KB

english, 2006

3

Reduction of ohmic contact resistivity on p-GaN using N2 plasma surface treatment at room temperature

Tang, Yingwen, You, Da, Xu, Jintong, Li, Xue, Li, Xiangyang, Gong, Haimei

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 101 KB

english, 2006

4

Generation–recombination reduction in InAsSb photodiodes

Carras, M, Renard, C, Marcadet, X, Reverchon, J L, Vinter, B, Berger, V

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 191 KB

english, 2006

5

On the specific contact resistance of metal contacts to p-type GaN

Lewis, L, Maaskant, P P, Corbett, B

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

6

A THz quantum cascade detector in a strong perpendicular magnetic field

Scalari, Giacomo, Graf, Marcel, Hofstetter, Daniel, Faist, Jérôme, Beere, Harvey, Ritchie, David

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

7

Analysis of a semiconductor optical amplifier with polarization-insensitive gain and polarization-insensitive phase modulation

Huang, Lirong, Huang, Dexiu, Chen, Jun, Liu, Deming, Zhang, Xinliang

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

8

The effect of substrate temperature on the properties of ITO thin films for OLED applications

Reddy, V Sivaji, Das, K, Dhar, A, Ray, S K

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 1.28 MB

english, 2006

9

Quantum confinement effects in silicon nanocrystals produced by laser-induced etching and cw laser annealing

Mavi, H S, Shukla, A K, Kumar, Rajesh, Rath, S, Joshi, Bipin, Islam, S S

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

10

The effect of Al 2 O 3 nanolayers on the efficiency of organic light-emitting devices

Niu, Lianbin, Zhang, Fujia

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 344 KB

english, 2006

11

Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers

Grim, J R, Benamara, M, Skowronski, M, Everson, W J, Heydemann, V D

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 770 KB

english, 2006

12

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In x Ga 1− x As/AlGaAs pHEMT

Huang, Jun-Chin, Hsu, Wei-Chou, Lee, Ching-Sung, Chang, Wei-Chen, Huang, Dong-Hai

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006

13

Optimization of the source/drain extension region profile for suppression of short channel effects in sub-50 nm DG MOSFETs with high-κ gate dielectrics

Kranti, Abhinav, Armstrong, G Alastair

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 310 KB

english, 2006

14

Electrical transport properties in nitrogen-doped p-type ZnO thin film

Xiao, Z Y, Liu, Y C, Li, B H, Zhang, J Y, Zhao, D X, Lu, Y M, Shen, D Z, Fan, X W

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 158 KB

english, 2006

15

Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

Rubinger, R M, Ribeiro, G M, Oliveira, A G de, Albuquerque, H A, Silva, R L da, Rubinger, C P L, Rodrigues, W N, Moreira, M V B

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 250 KB

english, 2006

16

An investigation of annealing on the dielectric performance of TiO 2 thin films

Yang, Wenli, Marino, Joseph, Monson, Alexander, Wolden, Colin A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006

17

The evolution of interface phonon–polariton modes in a finite superlattice with a structural defect

He, Meng-Dong, Wang, Ling-Ling, Huang, Wei-Qing, Wang, Xin-Jun, Zou, Bing-Suo

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 1.06 MB

english, 2006

18

The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films

Venkatachalam, S, Mangalaraj, D, Narayandass, Sa K, Kesavamoorthy, R, Magudapathy, P, Sundaravel, B, Kalavathi, S, Nair, K G M

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 491 KB

english, 2006

19

The effect of high-energy electron irradiation on ZnO-based ohmic and Schottky contacts

Coskun, Cevdet, Gedik, Nebi, Balci, Ercan

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 1.20 MB

english, 2006

20

Size and density control of InAs quantum dot ensembles on self-assembled nanostructured templates

Lee, J H, Wang, Zh M, Liang, B L, Sablon, K A, Strom, N W, Salamo, G J

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 499 KB

english, 2006

21

Measurements of the electrical excitation of quantum Hall devices in the real-time domain

Vasile, G, Stellmach, Ch, Hein, G, Nachtwei, G

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 432 KB

english, 2006

22

Modelling challenges in sub-100 nm gate stack MOSFETs

Mangla, Tina, Sehgal, Amit, Gupta, Mridula, Gupta, R S

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 816 KB

english, 2006

23

An ultra-narrow spectral linewidth photodetector operating at a long wavelength

Huang, Hui, Ren, Xiaomin, Wang, Xingyan, Cui, Hailin, Wang, Wenjuan, Wang, Qi, Huang, Yongqing

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 401 KB

english, 2006

24

Exploration of the inherent magnetoresistance in InSb thin films

Zhang, Tong, Harris, J J, Branford, W R, Clowes, S K, Cohen, L F, Solin, S A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 107 KB

english, 2006

25

Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: the influence of strong impurity and defect scattering

Martinez, C E, Stanton, N M, Kent, A J, Williams, M L, Harrison, I, Tang, H, Webb, J B, Bardwell, J A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

26

Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Chen, Tzu-Pin, Fu, Ssu-I, Tsai, Jung-Hui, Lour, Wen-Shiung, Guo, Der-Feng, Cheng, Shiou-Ying, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

27

Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron–hole system

Takashina, K, Nicholas, R J, Kardynal, B, Mason, N J, Maude, D K, Portal, J C

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 528 KB

english, 2006

28

A GaN-based two-sensor array for methane detection in an ethanol environment

Popa, V, Tiginyanu, I M, Ursaki, V V, Volcius, O, Morkoç, H

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 493 KB

english, 2006

29

Optically induced hysteresis of bilateral p–i–n junctions incorporated with InAs quantum dots

Xu, Xiulai, Williams, David A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 251 KB

english, 2006

30

Transmission Fabry–Pèrot interference thermometry for thermal characterization of microelectronic devices

Perpiñà, X, Jordà, X, Madrid, F, Vellvehi, M, Millán, J, Mestres, N

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 490 KB

english, 2006

31

Properties of a nanocrystalline GaN p–n homojunction prepared by a high pressure sputtering technique

Das, S N, Pal, A K

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 448 KB

english, 2006

32

The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors

Kordoš, P, Kúdela, P, Gregušová, D, Donoval, D

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 449 KB

english, 2006

33

Selective chemical vapour etching of Si 1− x Ge x versus Si with gaseous HCl

Bogumilowicz, Y, Hartmann, J M, Fabri, J M, Billon, T

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 787 KB

english, 2006

34

Excess of nonequilibrium charge carriers due to heating by electric fields: influence on the transport phenomenon

Gurevich, Yu G, Cruz, G Gonzalez de la

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

35

Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

Bayat, Khadijeh, Vygranenko, Yuriy, Sazonov, Andrei, Farrokh-Baroughi, Mahdi

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 151 KB

english, 2006

36

Carrier heating in semiconductor optical amplifier-based Sagnac-type all-optical switches

Gomez-Iglesias, A, Fenn, J G, Mazilu, M, Manning, R J, Miller, A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 352 KB

english, 2006

37

The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

Reddy, V Rajagopal, Reddy, N Ramesha, Choi, Chel-Jong

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 229 KB

english, 2006

38

Editorial

Molenkamp, Laurens, Bedrock, Claire

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 20 KB

english, 2006

39

Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO 2 layers by ion implantation

Kulakci, M, Serincan, U, Turan, R

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 331 KB

english, 2006

40

A collector-up heterojunction bipolar transistor using a p-type doping buried layer

Hsu, Hung-tsao, Hsin, Yue-ming

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 465 KB

english, 2006

41

The unacceptable variability in tunnel currents for proposed electronic device applications

Kelly, Michael J

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 77 KB

english, 2006

42

Mechanisms of current flow in p-TlGaSe 2 single crystals

Seyidov, MirHasan Yu, Sahin, Y, Aslan, M H, Suleymanov, R A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 284 KB

english, 2006

43

Elastic strain relaxation in GaInAsP/InP membrane quantum wire structures

Ferdous, Fahmida, Haque, A

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

44

A hybrid model for the origin of photoluminescence from Ge nanocrystals in a SiO 2 matrix

Singha, A, Roy, A, Kabiraj, D, Kanjilal, D

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 674 KB

english, 2006

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