Temperature-dependent characteristics of an emitter-ledge...

Semiconductor Science and Technology 2006 / 12 Vol. 21; Iss. 12

Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Chen, Tzu-Pin, Fu, Ssu-I, Tsai, Jung-Hui, Lour, Wen-Shiung, Guo, Der-Feng, Cheng, Shiou-Ying, Liu, Wen-Chau
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Volume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/12/040
Date:
December, 2006
File:
PDF, 238 KB
english, 2006
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