Characterization of strain relaxation in low-defect-density...

Semiconductor Science and Technology 2000 / 07 Vol. 15; Iss. 7

Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping

Nur, O, Karlsteen, M, Södervall, U, Willander, M, Patel, C J, Hernandez, C, Campidelli, Y, Bensahel, D, Kyutt, R N
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Volume:
15
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/15/7/101
Date:
July, 2000
File:
PDF, 107 KB
english, 2000
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