Comparison of gain in group-III-nitride laser structures...

Semiconductor Science and Technology 2007 / 07 Vol. 22; Iss. 7

Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates

Swietlik, T, Franssen, G, Skierbiszewski, C, Czernecki, R, Wiśniewski, P, Kryśko, M, Leszczyński, M, Grzegory, I, Mensz, P, Juršenas, S, Suski, T, Perlin, P
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/7/011
Date:
July, 2007
File:
PDF, 281 KB
english, 2007
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