Study of the leakage current mechanism in Schottky contacts...

Semiconductor Science and Technology 2009 / 05 Vol. 24; Iss. 5

Study of the leakage current mechanism in Schottky contacts to Al 0.25 Ga 0.75 N/GaN heterostructures with AlN interlayers

Huang, Sen, Shen, Bo, Xu, Fu-Jun, Lin, Fang, Miao, Zhen-Lin, Song, Jie, Lu, Lin, Cen, Long-Bin, Sang, Li-Wen, Qin, Zhi-Xin, Yang, Zhi-Jian, Zhang, Guo-Yi
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Volume:
24
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/24/5/055005
Date:
May, 2009
File:
PDF, 449 KB
english, 2009
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