Volume 24; Issue 5

Semiconductor Science and Technology

Volume 24; Issue 5

1

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

Hartmann, J M, Abbadie, A, Cherkashin, N, Grampeix, H, Clavelier, L

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 3.29 MB

english, 2009

2

Fermi level pinning and effects on CuInGaSe 2 -based thin-film solar cells

Dharmadasa, I M

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 190 KB

english, 2009

3

The effect of the intrinsic layer on the reliability of nitride-based p–i–n photodetectors

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 569 KB

english, 2009

4

Fabrication of field-effect transistors based on Fe 3+ -doped titania by sol–gel methods

Liau, Leo Chau-Kuang, Chou, Wen-Wei

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 229 KB

english, 2009

5

Substantial photo-response of InGaN p–i–n homojunction solar cells

Zeng, S W, Zhang, B P, Sun, J W, Cai, J F, Chen, C, Yu, J Z

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 486 KB

english, 2009

6

Redistribution of multi-quantum well states induced by current stress in In x Ga 1− x N/GaN light-emitting diodes

Rigutti, L, Basiricò, L, Cavallini, A, Meneghini, M, Meneghesso, G, Zanoni, E

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 416 KB

english, 2009

7

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Nikitina, I, Vassilevski, K, Horsfall, A, Wright, N, O'Neill, A G, Ray, S K, Zekentes, K, Johnson, C M

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 530 KB

english, 2009

8

The improved performance of a transparent ZnO thin-film transistor with AlN/Al 2 O 3 double gate dielectrics

Lee, Jung-Min, Choi, Byung-Hyun, Ji, Mi-Jung, Park, Jung-Ho, Kwon, Jae-Hong, Ju, Byeong-Kwon

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 699 KB

english, 2009

9

Comparative analysis of dark current between SiN x and polyimide surface passivation of an avalanche photodiode based on GaAs

Song, Hong Joo, Roh, Cheong Hyun, Lee, Jun Ho, Choi, Hong Goo, Kim, Dong Ho, Park, Jung Ho, Hahn, Cheol-Koo

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 356 KB

english, 2009

10

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

Wang, H, Jiang, D S, Zhu, J J, Zhao, D G, Liu, Z S, Wang, Y T, Zhang, S M, Yang, H

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 958 KB

english, 2009

11

Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication

Xu, Dawei, Tong, Cunzhu, Yoon, Soon Fatt, Fan, Weijun, Zhang, Dao Hua, Wasiak, Michał, Piskorski, Łukasz, Gutowski, Krzysztof, Sarzała, Robert P, Nakwaski, Włodzimierz

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 315 KB

english, 2009

12

Study of the leakage current mechanism in Schottky contacts to Al 0.25 Ga 0.75 N/GaN heterostructures with AlN interlayers

Huang, Sen, Shen, Bo, Xu, Fu-Jun, Lin, Fang, Miao, Zhen-Lin, Song, Jie, Lu, Lin, Cen, Long-Bin, Sang, Li-Wen, Qin, Zhi-Xin, Yang, Zhi-Jian, Zhang, Guo-Yi

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 449 KB

english, 2009

13

Impact of intrinsic parameter fluctuations on the performance of In 0.75 Ga 0.25 As implant free MOSFETs

Seoane, N, Garcia-Loureiro, A, Aldegunde, M, Kalna, K, Asenov, A

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 810 KB

english, 2009

14

A numerical study of the emission enhancement of light emitting diodes with an interfacial photonic crystal resonance reflector

Zhao, Yu, Wang, Xuehua, Fan, Bingfeng, Zhang, Baijun, Wang, Gang

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 879 KB

english, 2009

15

A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

Putyato, Mikhail A, Preobrazhenskii, Valerii V, Semyagin, Boris R, Fëklin, Dima F, Pakhanov, Nikolai A, Emelianov, Eugene A, Chikichev, Sergei I

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009

16

Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

Lerch, W, Gschwandtner, A, Schneider, S, Theiler, T, Nenyei, Z, Peuse, B, Hu, Y

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 710 KB

english, 2009