Formation of Hg x Cd 1-x Te layers by ion exchange
Fedorov, V A, Ganshin, V A, Korkishko, Yu NVolume:
6
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/6/12/001
Date:
December, 1991
File:
PDF, 240 KB
english, 1991