Volume 6; Issue 12

Semiconductor Science and Technology

Volume 6; Issue 12

1

A simplified self-consistent model of charge control in quasi-square quantum well HFETs

Carline, R T, Allsopp, D W E

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 534 KB

english, 1991

2

Physical properties of undoped and doped hydrogenated amorphous silicon carbide

Demichelis, F, Pirri, C F, Tresso, E, Mea, G Della, Rigato, V, Rava, P

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 410 KB

english, 1991

3

Ionization energy of the Si acceptor on Al x Ga 1-x As

Oelgart, G, Lippold, G, Proctor, M, Martin, D, Reinhart, F K

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 388 KB

english, 1991

4

Highly doped In 0.52 Al 0.48 As growth and ohmic contact formation

Katz, A, Hobson, W S, Chu, S N G, Weir, B E, Pearton, S J, Savin, W

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 428 KB

english, 1991

5

Quasi-two-dimensional magneto-polarons in tilted magnetic fields

Kuhn, O, Selbmann, P E

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 215 KB

english, 1991

6

Growth and dry etch processing of MOMBE GaAs p-n junctions

Pearton, S J, Ren, F, Abernathy, C R, Fullowan, T R, Lothian, J R

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 268 KB

english, 1991

7

Optical absorption of thin Hg 1-x Cd x Te epitaxial layers

Mollmann, K -P, Kissel, H

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 196 KB

english, 1991

8

Quantum point contacts prepared by optical contact lithography

Grambow, P, Nieder, J, Heitmann, D, Klitzing, K von, Ploog, K

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

9

Formation of Hg x Cd 1-x Te layers by ion exchange

Fedorov, V A, Ganshin, V A, Korkishko, Yu N

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 240 KB

english, 1991

10

Dopant activation and Hall mobility in B- and As-implanted polysilicon films after rapid or conventional thermal annealing

Jeanjean, P, Sellitto, P, Sicart, J, Robert, J L, Chaussemy, G, Laugier, A

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 355 KB

english, 1991

11

Electron velocity in indium phosphide single-heterojunction quantum wells

Bose, D, Nag, B R

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 374 KB

english, 1991

12

Structural, electrical and optical properties of CuGa 0.75 In 0.25 Se 2 thin films

Aparna, Y, Reddy, P S, Naidu, B Srinivasulu, Reddy, P Jayarama

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 332 KB

english, 1991

13

Titanium mononitride as an antireflection layer on aluminium metallization for submicron photolithographic patterning

Loong, Wen-An, Chiu, Kuo-Din

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 456 KB

english, 1991

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