Dopant activation and Hall mobility in B- and As-implanted...

Semiconductor Science and Technology 1991 / 12 Vol. 6; Iss. 12

Dopant activation and Hall mobility in B- and As-implanted polysilicon films after rapid or conventional thermal annealing

Jeanjean, P, Sellitto, P, Sicart, J, Robert, J L, Chaussemy, G, Laugier, A
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Volume:
6
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/6/12/005
Date:
December, 1991
File:
PDF, 355 KB
english, 1991
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