Quantum simulation of a heterojunction vertical tunnel FET...

Solid-State Electronics 2016 / 02 Vol. 116

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

Cao, Jiang, Cresti, Alessandro, Esseni, David, Pala, Marco
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Volume:
116
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.11.003
Date:
February, 2016
File:
PDF, 1.21 MB
english, 2016
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