Volume 116

Solid-State Electronics

Volume 116

1

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

Cao, Jiang, Cresti, Alessandro, Esseni, David, Pala, Marco

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.21 MB

english, 2016

2

A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms

Solaro, Y., Fonteneau, P., Legrand, C.A., Fenouillet-Beranger, C., Ferrari, P., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 896 KB

english, 2016

3

The effect of annealing temperatures to prepare ZnO seeds layer on ZnO nanorods array/TiO2 nanoparticles photoanode

Chou, Hsueh-Tao, Hsu, Ho-Chun

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.86 MB

english, 2016

4

DC sputtered amorphous In–Sn–Zn–O thin-film transistors: Electrical properties and stability

Nakata, Mitsuru, Zhao, Chumin, Kanicki, Jerzy

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 796 KB

english, 2016

5

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 324 KB

english, 2016

6

Study of drain-extended NMOS under electrostatic discharge stress in 28nm and 40nm CMOS process

Wang, Weihuai, Jin, Hao, Dong, Shurong, Zhong, Lei, Han, Yan

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.49 MB

english, 2016

7

Full electrothermal physically-based modeling of the power diode using PSPICE

Shaker, Ahmed, Abouelatta, Mohamed, El-Banna, Mohammed, Ossaimee, Mahmoud, Zekry, Abdelhalim

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.52 MB

english, 2016

8

A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier

Kargarrazi, Saleh, Lanni, Luigia, Zetterling, Carl-Mikael

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.02 MB

english, 2016

9

Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)

Kim, Seung Kyu, Choi, Woo Young

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.71 MB

english, 2016

10

Monolithic integration of low-pass filters with ESD protections on p+ silicon/porous silicon substrates

Capelle, Marie, Billoue, Jérôme, Concord, Joël, Poveda, Patrick, Gautier, Gaël

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 708 KB

english, 2016

11

Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air

Goyal, Nitin, Dusari, Srujana, Bardong, Jochen, Medjdoub, Farid, Kenda, Andreas, Binder, Alfred

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

12

Closed form expressions for sheet resistance and mobility from Van-der-Pauw measurement on 90° symmetric devices with four arbitrary contacts

Ausserlechner, Udo

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.77 MB

english, 2016

13

High-performance logic transistor DC benchmarking toward 7nm technology-node between III–V and Si tri-gate n-MOSFETs using virtual-source injection velocity model

Baek, Rock-Hyun, Kim, Jin Su, Kim, Do-Kywn, Kim, Taewoo, Kim, Dae-Hyun

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 646 KB

english, 2016

14

Extraction of second harmonic from an InP based planar Gunn diode using diamond resonator for milli-metric wave frequencies

Maricar, Mohamed Ismaeel, Khalid, Ata, Cumming, D.R.S., Oxley, C.H.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 820 KB

english, 2016

15

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafí, J.M., Pellegrini, G., Fadeyev, V., Galloway, Z., Sadrozinski, H.F.-W., Christophersen, M., Phlips, B.F., Lynn, D., Kierstead, J., Hoeferkamp, M., Gorelov, I., Palni, P., Wang, R., Seidel, S.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.74 MB

english, 2016

16

Thin-films and transistors of p-ZnTe

Lastra, G., Olivas, A., Mejía, J.I., Quevedo-López, M.A.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 388 KB

english, 2016

17

Comprehensive understanding of charge lateral migration in 3D SONOS memories

Liu, Lifang, Arreghini, Antonio, Van den bosch, Geert, Pan, Liyang, Van Houdt, Jan

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 782 KB

english, 2016

18

Preliminary study and design for variation of lateral width SOI LDMOS device

Wang, Ying, Meng, Xiong-fei, Cui, Su-fen

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.37 MB

english, 2016

19

Editorial Board

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 55 KB

english, 2016

20

Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer

Lin, Qing, Zhao, Crystal, Sheng, Nan

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

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