Impact of bias conditions on electrical stress and ionizing...

Solid-State Electronics 2016 / 01 Vol. 115

Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs

Ding, Lili, Gnani, Elena, Gerardin, Simone, Bagatin, Marta, Driussi, Francesco, Selmi, Luca, Royer, Cyrille Le, Paccagnella, Alessandro
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Volume:
115
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.09.003
Date:
January, 2016
File:
PDF, 1.23 MB
english, 2016
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