Volume 115

Solid-State Electronics

Volume 115

1

Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition

Dwivedi, A.D.D., Chakravorty, Anjan, D’Esposito, Rosario, Sahoo, Amit Kumar, Fregonese, Sebastien, Zimmer, Thomas

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 616 KB

english, 2016

2

Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

Sahoo, A.K., Subramani, N.K., Nallatamby, J.C., Sylvain, L., Loyez, C., Quere, R., Medjdoub, F.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 884 KB

english, 2016

3

Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

Kao, Tsung-Hsien, Chang, Shoou-Jinn, Fang, Yean-Kuen, Huang, Po-Chin, Wang, Bo-Chin, Wu, Chung-Yi, Wu, San-Lein

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.33 MB

english, 2016

4

Ballistic modeling of InAs nanowire transistors

Jansson, Kristofer, Lind, Erik, Wernersson, Lars-Erik

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.47 MB

english, 2016

5

Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device

Xu, Qiuxia, Xu, G., Zhou, H., Zhu, H., Liu, J., Wang, Y., Li, J., Xiang, J., Liang, Q., Wu, H., Zhong, J., Xu, M., Xu, W., Ma, X., Wang, X., Tong, X., Chen, D., Yan, J., Zhao, C., Ye, T.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.08 MB

english, 2016

6

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Grossi, Alessandro, Zambelli, Cristian, Olivo, Piero, Miranda, Enrique, Stikanov, Valeriy, Walczyk, Christian, Wenger, Christian

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.48 MB

english, 2016

7

A high dynamic range power sensor based on GaAs MMIC process and MEMS technology

Yi, Zhenxiang, Liao, Xiaoping

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 3.10 MB

english, 2016

8

Properties and mechanisms of Z2-FET at variable temperature

Dirani, Hassan El, Solaro, Yohann, Fonteneau, Pascal, Ferrari, Philippe, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.85 MB

english, 2016

9

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Agarwal, Harshit, Kushwaha, Pragya, Gupta, Chetan, Khandelwal, Sourabh, Hu, Chenming, Chauhan, Yogesh Singh

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.16 MB

english, 2016

10

Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50nm

Le Royer, C., Villalon, A., Hutin, L., Martinie, S., Nguyen, P., Barraud, S., Glowacki, F., Allain, F., Bernier, N., Cristoloveanu, S., Vinet, M.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.96 MB

english, 2016

11

Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs

Ding, Lili, Gnani, Elena, Gerardin, Simone, Bagatin, Marta, Driussi, Francesco, Selmi, Luca, Royer, Cyrille Le, Paccagnella, Alessandro

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.23 MB

english, 2016

12

A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands

Deng, Wanling, Huang, Junkai, Ma, Xiaoyu, Liou, Juin J., Yu, Fei

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.09 MB

english, 2016

13

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Du, Jiangfeng, Chen, Nanting, Jiang, Zhiguang, Bai, Zhiyuan, Liu, Yong, Liu, Yang, Yu, Qi

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.43 MB

english, 2016

14

Resistive memory variability: A simplified trap-assisted tunneling model

Garbin, Daniele, Vianello, Elisa, Rafhay, Quentin, Azzaz, Mourad, Candelier, Philippe, DeSalvo, Barbara, Ghibaudo, Gerard, Perniola, Luca

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.40 MB

english, 2016

15

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Maestro, M., Diaz, J., Crespo-Yepes, A., Gonzalez, M.B., Martin-Martinez, J., Rodriguez, R., Nafria, M., Campabadal, F., Aymerich, X.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

16

A monolithic 3D integrated nanomagnetic co-processing unit

Becherer, M., Breitkreutz-v. Gamm, S., Eichwald, I., Žiemys, G., Kiermaier, J., Csaba, G., Schmitt-Landsiedel, D.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 922 KB

english, 2016

17

Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut™ GeOI substrates

Yu, Xiao, Kang, Jian, Zhang, Rui, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.15 MB

english, 2016

18

Replacement fin processing for III–V on Si: From FinFets to nanowires

Waldron, Niamh, Merckling, Clement, Teugels, Lieve, Ong, Patrick, Sebaai, Farid, Barla, Kathy, Collaert, Nadine, Thean, Voon-Yew (Aaron)

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 3.39 MB

english, 2016

19

Editorial Board

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 55 KB

english, 2016

20

Editorial Board

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 55 KB

english, 2016

21

Selected papers from the EUROSOI-ULIS conference

Gnani, Elena, Palestri, Pierpaolo

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 186 KB

english, 2016

22

A new latch-free LIGBT on SOI with very high current density and low drive voltage

Olsson, J., Vestling, L., Eklund, K.-H.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.91 MB

english, 2016

23

The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices

Sharma, Prateek, Tyaginov, Stanislav, Jech, Markus, Wimmer, Yannick, Rudolf, Florian, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.68 MB

english, 2016

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