Growth of relaxed Si1−xGex layers using an oxygen doped...

Growth of relaxed Si1−xGex layers using an oxygen doped Si(O) compliant layer

E Haq, W.-X Ni, G.V Hansson
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Volume:
89
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(01)00766-8
File:
PDF, 237 KB
english, 2002
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