Volume 89; Issue 1-3

Materials Science and Engineering: B

Volume 89; Issue 1-3
7

High Ge content photodetectors on thin SiGe buffers

M Bauer, C Schöllhorn, K Lyutovich, E Kasper, M Jutzi, M Berroth
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 544 KB
english, 2002
10

Growth of relaxed Si1−xGex layers using an oxygen doped Si(O) compliant layer

E Haq, W.-X Ni, G.V Hansson
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 237 KB
english, 2002
15

MBE source for germanium–carbon co-evaporation

M Oehme, M Bauer, E Kasper
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 169 KB
english, 2002
17

Thermal and chemical loading effects in non selective Si/SiGe epitaxy

C Fellous, F Romagna, D Dutartre
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 272 KB
english, 2002
22

Preface

E Kasper, I Eisele, E.H.C Parker
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 45 KB
english, 2002
23

Si based optoelectronics for communications

G Masini, L Colace, G Assanto
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 248 KB
english, 2002
25

SiGe technology bears fruits

J Berntgen, A Schueppen, P Maier, M Tortschanoff, W Kraus, M Averweg
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 394 KB
english, 2002
29

Aspects of Ge/Si self-assembled quantum dots

P Boucaud, V Le Thanh, V Yam, S Sauvage, N Meneceur, M Elkurdi, D Débarre, D Bouchier
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 359 KB
english, 2002
30

Nucleationless island formation in SiGe/Si(100) heteroepitaxy

P Sutter, M.G Lagally
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 244 KB
english, 2002
32

Dopant diffusion in SiGe: modeling stress and Ge chemical effects

A Pakfar
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 123 KB
english, 2002
35

Reverse temperature dependence of Sb sticking on Si(100) surfaces

K Nakagawa, S Yamaguchi, N Sugii, Y Shiraki
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 103 KB
english, 2002
36

Epitaxy of carbon-rich silicon with MBE

P Lavéant, G Gerth, P Werner, U Gösele
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 243 KB
english, 2002
39

Rapid thermal oxidation of epitaxial SiGe thin films

A Terrasi, S Scalese, R Adorno, E Ferlito, M Spadafora, E Rimini
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 120 KB
english, 2002
46

Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD

P Ribot, D Dutartre
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 554 KB
english, 2002
57

Selective SiGe epitaxy by rtcvd for new device architectures

P Ribot, S Monfray, T Skotnicki, D Dutartre
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 307 KB
english, 2002
58

Thermal stability of B in poly-SiGe on SiON

T Sadoh, Fitrianto, M Kunigami, A Kenjo, A Miyauchi, H Inoue, M Miyao
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 171 KB
english, 2002
60

Photoluminescence of boron-doped Si1−xGex epilayers grown by UHV-CVD

N.L Rowell, H Lafontaine, M Dion
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 252 KB
english, 2002
68

Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs

M.Q Huda, K Sakamoto
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 240 KB
english, 2002
70

Growth and characterization of Ge islands on Si(1 1 0)

P Ferrandis, L Vescan
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 205 KB
english, 2002
72

Electronic structure of Ge/Si self-assembled quantum dots with different shapes

J.Y. Kim, J.H. Seok
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 130 KB
english, 2002
81

Formation of Ge quantum dots on boron-reconstructed surface/Si(111)

H Mori, H Nagai, T Yanagawa, S Matsumoto
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 248 KB
english, 2002
87

Sb-surfactant mediated growth of Ge nanostructures

A Portavoce, A Ronda, I Berbezier
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 429 KB
english, 2002
90

The vertical concept of power MOSFETs

C Tolksdorf, C Fink, J Schulze, S Sedlmaier, W Hansch, W Werner, W Kanert, I Eisele
Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 341 KB
english, 2002
94

Author index

Journal:
Materials Science and Engineering: B
Year:
2002
File:
PDF, 41 KB
2002
95

Subject index

Journal:
Materials Science and Engineering: B
Year:
2002
Language:
english
File:
PDF, 88 KB
english, 2002