Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors
J Eberhardt, E KasperVolume:
89
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(01)00808-x
File:
PDF, 227 KB
english, 2002