![](/img/cover-not-exists.png)
Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors
O.G Schmidt, U Denker, M Dashiell, N.Y Jin-Phillipp, K Eberl, R Schreiner, H Gräbeldinger, H Schweizer, S Christiansen, F ErnstVolume:
89
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(01)00810-8
File:
PDF, 1.20 MB
english, 2002