Complementary study of defects in GaN by photo-etching and...

Materials Science and Engineering: B 2002 Vol. 91-92; Iss. none

Complementary study of defects in GaN by photo-etching and TEM

J.L. Weyher, L. Macht, F.D. Tichelaar, H.W. Zandbergen, P.R. Hageman, P.K. Larsen
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Volume:
91-92
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(01)01035-2
File:
PDF, 280 KB
english, 2002
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