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Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire
J.L. Rouvière, M. Arlery, R. Niebuhr, K.H. Bachem, O. BriotVolume:
43
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0921-5107(96)01855-7
File:
PDF, 1.08 MB
english, 1997