Volume 43; Issue 1-3

Materials Science and Engineering: B

Volume 43; Issue 1-3

1

Compensation in p-type ZnSe based semiconductors

K.A. Prior, W. Meredith, G.D. Brownlie, Z. Zhu, P.J. Thompson, J.S. Milnes, I.S. Hauksson, G. Horsburgh, T.A. Steele, S.Y. Wang, B.C. Cavenett

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 819 KB

english, 1997

2

Nitrogen doping in ZnSe

S. Pöykkö, M.J. Puska, T. Korhonen, R.M. Nieminen

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 396 KB

english, 1997

3

Effects of thermal annealing on properties of p-type ZnSe grown by MOVPE

Ken-ichi Ogata, Daisuke Kawaguchi, Takashi Kera, Shizuo Fujita, Shigeo Fujita

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

4

ZnCdSe-ZnSe heterostructures grown by MOVPE

T. Cloitre, S. Sanchez, A. Chergui, B. Honerlague, R.L. Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 532 KB

english, 1997

5

Issues in molecular-beam epitaxy of ZnSe-based heterostructures for blue-green lasers

E. Tournié, C. Morhain, C. Ongaretto, V. Bousquet, P. Brunet, G. Neu, J.-P. Faurie, R. Triboulet, J.O. Ndap

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 814 KB

english, 1997

6

Characterization of structural defects in MBE grown ZnSe

L. Worschech, W. Ossau, C. Fischer, H. Schäfer, G. Landwehr

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 450 KB

english, 1997

7

In-situ reflectometry and RDS monitoring of atomic layer MBE of ZnSe and ZnTe on GaAs

Marcus J. Kastner, Rainer Duschl, Eva Soßna, Wolfgang Gebhardt

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 440 KB

english, 1997

8

Resonant time-integrated and time-resolved photoluminescence in ZnSe-based heterostructures

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 744 KB

english, 1997

9

Intensity-dependent hot-phonon relaxation in ZnSe

V. Kutzer, H. Siegle, C. Thomsen, A. Hoffman, I. Broser

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

10

Device characteristics of green II–VI semiconductor lasers

M. Buijs, K.W. Haberern, T. Marshall, J.M. Gaines, K.K. Law, P.F. Baude, TJ. Miller, M.A. Haase, G.M. Haugen

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 672 KB

english, 1997

11

Room temperature laser operation of wide band-gap II–VI laser diodes.

S. Itoh, S. Taniguchi, T. Hino, R. Imoto, K. Nakano, N. Nakayama, M. Ikeda, A. Ishibashi

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 594 KB

english, 1997

12

Expected pronounced strengthening of II–VI lattices with beryllium chalcogenides

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 545 KB

english, 1997

13

Optical nonlinearities and lasing in II–VI multiple quantum wells

L. Calcagnile, G. Coli', R. Cingolani, M. Lomascolo, M. Di Dio, L. Sorba, A. Franciosi

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 847 KB

english, 1997

14

Theoretical investigation of new MgS-ZnSe structures

P. Bigenwald, L. Kończewicz, M. Chibane, T. Cloitre, P. Testud

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 379 KB

english, 1997

15

Molecular beam epitaxy of Be-related II–VI compounds

T. Litz, H.J. Lugauer, F. Fischer, U. Zehnder, U. Lunz, T. Gerhard, H. Ress, A. Waag, G. Landwehr

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 490 KB

english, 1997

16

P-type doping of beryllium chalcogenides

H.-J. Lugauer, F. Fischer, T. Litz, A. Waag, U. Zehnder, W. Ossau, T. Gerhard, G. Landwehr, C. Becker, R. Kruse, J. Geurts

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 435 KB

english, 1997

17

Electrical properties of light-emitting devices based on the II–VI compounds BeTe and BeMgZnSe

F. Fischer, J. Laubender, H.J. Lugauer, T. Litz, A. Weingärtner, U. Zehnder, T. Gerhard, W. Ossau, K. Schüll, A. Waag, G. Landwehr

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 528 KB

english, 1997

18

Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001) GaAs

M. Mazzer, L. Calcagnile, G. Leo, G. Salviati, C. Zanotti-Fregonara, N. Lovergine, P. Prete, G. Imbriani, R. Cingolani, A.M. Mancini, F. Romanato, A.V. Drigo

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 510 KB

english, 1997

19

Structural and optical properties of II–VI thin films and II–VI multilayered structures grown on silicon by laser ablation

A. Giardini, M. Ambrico, D. Smaldone, R. Martino, V. Capozzi, G. Perna, G.F. Lorusso

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 529 KB

english, 1997

20

Semi-insulating and n-type substrates quality ZnSe and ZnSe1 − xSx (x < 0.15) produced by low temperature physical vapour transport

A. Mycielski, A.J. Szadkowski, L. Kowalczyk

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 329 KB

english, 1997

21

Preparation of low resistive unintentionally doped n-type ZnSe

M. Wienecke, B. Reinhold, G. Gorbunowa, V. Kasiyan

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 413 KB

english, 1997

22

Linear spectroscopy and exciton binding energies in (Zn, Cd)Se-ZnSe heterostructures

Rachid Essaid, Pierre Bigenwald, Sandrine Sanchez, Thierry Cloitre, Fabio Liaci, Bernard Gil, Roger-Louis Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 428 KB

english, 1997

23

Characteristic exciton properties of ZnS and ZnSe films

A. Manar, A. Chergui, D. Guennani, D. Ohlmann, T. Cloitre, R.L. Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

24

Continuity conditions at semiconductor interfaces and in-heterostructure material physics

P. Masri, J. Siviniant

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 325 KB

english, 1997

25

Optical and magneto-optical differential spectroscopy of a ZnCdSe-ZnSe superlattice

A. Rajira, A. Abounadi, D. Coquillat, M. Averous, J. Calas, T. Cloitre, R.L. Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 433 KB

english, 1997

26

ZnSe-ZnCdSe single quantum wells: dispersion relations and absorption processes

P. Bigenwald, B. Gil, L. Konczewicz, P. Testud

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 269 KB

english, 1997

27

Potential applications of III–V nitride semiconductors

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 1.07 MB

english, 1997

28

First laser diodes fabricated from III–V nitride based materials

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 701 KB

english, 1997

29

Electric field effects on excitons in gallium nitride

J.Y. Duboz, F. Binet, E. Rosencher, F. Scholz, V. Härle

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 581 KB

english, 1997

30

Optimization of the MOVPE growth of GaN on sapphire

O. Briot, J.P. Alexis, M. Tchounkeu, R.L. Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 805 KB

english, 1997

31

Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations

P.G. Middleton, C. Trager-Cowan, K.P. O'Donnell, T.S. Cheng, S.E. Hooper, C.T. Foxon

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 328 KB

english, 1997

32

The key role of polarity in the growth process of (0001) nitrides

B. Daudin, J.L. Rouvière, M. Arlery

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 424 KB

english, 1997

33

Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

J.L. Rouvière, M. Arlery, R. Niebuhr, K.H. Bachem, O. Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 1.08 MB

english, 1997

34

Analysis of vaporization kinetics of group-III nitrides

M.V. Averyanova, I.N. Przhevalskii, S.Yu. Karpov, Yu.N. Makarov, M.S. Ramm, R.A. Talalaev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 511 KB

english, 1997

35

Electronic structure and temperature dependence of excitons in GaN

B. Monemar, I.A. Buyanova, J.P. Bergman, H. Amano, I. Akasaki

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 389 KB

english, 1997

36

Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3

C. Merz, M. Kunzer, B. Šantić, U. Kaufmann, I. Akasaki, H. Amano

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 453 KB

english, 1997

37

Optically detected electron nuclear double resonance on the residual donor in GaN

F.K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 408 KB

english, 1997

38

Dynamics of excited states in GaN

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 870 KB

english, 1997

39

Optical gain in the nitrides: are there differences to other III–V semiconductors?

A. Hangleiter, G. Frankowsky, V. Härle, F. Scholz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 618 KB

english, 1997

40

Electron gas in modulation doped GaN/AlGaN structures

J.P. Bergman, A. Buyanov, T. Lundström, B. Monemar, H. Amano, I. Akasaki

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 400 KB

english, 1997

41

Shallow donors in epitaxial GaN

S. Fischer, D. Volm, D. Kovalev, B. Averboukh, A. Graber, H.C. Alt, B.K. Meyer

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 361 KB

english, 1997

42

Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction

A. Raymond, S. Juillaguet, B. Couzinet, I.El. Mezouar, A. Kamal-Saadi, M. Asif Khan, Q. Chen, J.W. Yang

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 409 KB

english, 1997

43

Luminescence and absorption of GaN films under high excitation

S. Petit, D. Guennani, P. Gilliot, C. Hirlimann, B. Hönerlage, O. Briot, R.L. Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 420 KB

english, 1997

44

Microstructural studies of GaN grown on (0001) sapphire by MOVPE

P. Vennegues, B. Beaumont, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 698 KB

english, 1997

45

Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy

P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 588 KB

english, 1997

46

III–V nitride materials: an approach through amorphous GaAs1 − xNx thin films

D. Lollman, K. Aguir, J. Bandet, B. Roumiguières, H. Carchano

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 477 KB

english, 1997

47

Atomic structure of the GaN(100,110,111) surfaces

J.L.A. Alves, H.W. Leite Alves, C. de Oliveira, R.D.S.C. Valadão, J.R. Leite

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 343 KB

english, 1997

48

Ti/Ni ohmic contacts to n-type gallium nitride

K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin, I.P. Nikitina, V.A. Dmitriev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 339 KB

english, 1997

49

Properties of cubic GaN grown by MBE

Oliver Brandt, Hui Yang, Jochen R. Müllhäuser, Achim Trampert, Klaus H. Ploog

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 955 KB

english, 1997

50

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

Matthew J. Schurman, Tom Slagaj, Chuong Tran, Robert Karlicek Jr., Ian Ferguson, Rick Stall, Alan Thompson

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 608 KB

english, 1997

51

MOVPE growth of InGaN on sapphire using growth initiation cycles

D. Schmitz, E. Woelk, G. Strauch, M. Deschler, H. Jürgensen

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 866 KB

english, 1997

52

Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy

M. Leroux, B. Beaumont, N. Grandjean, C. Golivet, P. Gibart, J. Massies, J. Leymarie, A. Vasson, A.M. Vasson

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 570 KB

english, 1997

53

Donor acceptor pair in molecular beam epitaxy grown GaN

G.B. Ren, D.J. Dewsnip, D.E. Lacklison, J.W. Orton, T.S. Cheng, C.T. Foxon

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 409 KB

english, 1997

54

GaN layer growth in relation to buffer deposition temperature

F. Demangeot, M.A. Renucci, J. Frandon, O. Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 454 KB

english, 1997

55

Relaxation of thermal strain in GaN epitaxial layers grown on sapphire

O. Gfrörer, T. Schlüsener, V. Härle, F. Scholz, A. Hangleiter

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 338 KB

english, 1997

56

Plasma preconditioning of sapphire substrate for GaN epitaxy

Christian Heinlein, Jostein Grepstad, Henning Riechert, Robert Averbeck

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 524 KB

english, 1997

57

Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

S. Christiansen, M. Albrecht, W. Dorsch, H.P. Strunk, A. Pelzmann, M. Mayer, M. Kamp, K.J. Ebeling, C. Zanotti-Fregonara, G. Salviati

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 978 KB

english, 1997

58

UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates

M. Asif Khan, Q. Chen, J. Yang, C.J. Sun, B. Lim, H. Temkin, J. Schetzina, M.S. Shur

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 420 KB

english, 1997

59

Beryllium chalcogenides for ZnSe-based light emitting devices

A. Waag, F. Fischer, H.-J. Lugauer, Th. Litz, T. Gerhard, J. Nürnberger, U. Lunz, U. Zehnder, W. Ossau, G. Landwehr, B. Roos, H. Richter

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 606 KB

english, 1997

60

Preface

R.L. Aulombard, B.C. Cavenett, B. Gil, R. Triboulet

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 66 KB

english, 1997

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