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III–V nitride materials: an approach through amorphous GaAs1 − xNx thin films
D. Lollman, K. Aguir, J. Bandet, B. Roumiguières, H. CarchanoVolume:
43
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(96)01868-5
File:
PDF, 477 KB
english, 1997