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In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
F Scholz, A Sohmer, J Off, V Syganow, A Dörnen, J.-S Im, A Hangleiter, H LaknerVolume:
50
Year:
1997
Language:
english
Pages:
7
DOI:
10.1016/s0921-5107(97)00184-0
File:
PDF, 313 KB
english, 1997