Volume 50; Issue 1-3

Materials Science and Engineering: B

Volume 50; Issue 1-3

1

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, P Vennéguès, J Massies, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

2

Characterization of Ca and C implanted GaN

B Mensching, C Liu, B Rauschenbach, K Kornitzer, W Ritter

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 125 KB

english, 1997

3

Origin of the Q=11 meV bound exciton in GaN

U Kaufmann, C Merz, B Šantic, R Niebuhr, H Obloh, K.H Bachem

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 133 KB

english, 1997

4

Optical properties of GaN epilayers grown on Si (111) and Si (001) substrates

M Godlewski, J.P Bergman, B Monemar, U Rossner, R Langer, A Barski

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 110 KB

english, 1997

5

Optical and magneto-optical characterization of heteroepitaxial gallium nitride

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 259 KB

english, 1997

6

Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique

M Julier, J Campo, D Coquillat, J.P Lascaray, D Scalbert, O Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 100 KB

english, 1997

7

Photoluminescence of exciton-polaritons in GaN

I.A Buyanova, J.P Bergman, B Monemar, H Amano, I Akasaki

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 97 KB

english, 1997

8

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

N.V Edwards, S.D Yoo, M.D Bremser, Ts Zheleva, M.N Horton, N.R Perkins, T.W Weeks Jr, H Liu, R.A Stall, T.F Kuech, R.F Davis, D.E Aspnes

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 176 KB

english, 1997

9

Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN

G Bentoumi, A Deneuville, B Beaumont, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 157 KB

english, 1997

10

III–V–N compounds for infrared applications

J Salzman, H Temkin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 180 KB

english, 1997

11

Optical characterization of MBE-grown GaNAs

G Pozina, I Ivanov, B Monemar, J Thordson, T.G Andersson

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 94 KB

english, 1997

12

The evolution of a-GaAs1−xNx/c-GaAs interface states as a function of Ar-NH3 plasma

Khalifa Aguir, Dave B.B Lollman, Hervé Carchano

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 126 KB

english, 1997

13

Comparison of luminescence and physical morphologies of GaN epilayers

C Trager-Cowan, P.G Middleton, K.P O'Donnell, S Clur, O Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 218 KB

english, 1997

14

Strong morphological dependence of luminescence efficiency and emission wavelength in hexagonal GaN crystallites directly imaged by scanning cathodoluminescence microscopy

F Bertram, J Christen, M Schmidt, M Topf, S Koymov, S Fischer, B Meyer

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 440 KB

english, 1997

15

Microscopic gain theory for group III nitride semiconductor quantum wells

A. Girndt, F. Jahnke, S.W. Koch, W.W. Chow

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 141 KB

english, 1997

16

Nanosecond pump-and-probe study of wurtzite GaN

T Deguchi, T Azuhata, T Sota, S Chichibu, N Sarukura, H Ohtake, T Yamanaka, S Nakamura

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 85 KB

english, 1997

17

Optical pumping in nitride cavities with etched mirror facets

F Binet, J.Y Duboz, N Laurent, C Bonnat, P Collot, F Hanauer, O Briot, B Gil, F Scholz, J Off, A Sohmer

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 121 KB

english, 1997

18

Two-photon spectroscopy in GaN

M Steube, K Reimann, D Fröhlich, S.J Clarke

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 87 KB

english, 1997

19

Spatially resolved investigations of the excitonic luminescence in GaN

A Hoffmann, J Christen, H Siegle, F Bertram, D Schmidt, L Eckey, C Thomsen, K Hiramatsu

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 377 KB

english, 1997

20

Electrical transport properties of III-nitrides

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 135 KB

english, 1997

21

Zinc-blende GaN: ab initio calculations

J.L.A Alves, H.W Leite Alves, C de Oliveira, R.D.S.C Valadão, J.R Leite

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 125 KB

english, 1997

22

Properties and applications of MBE grown AlGaN

M Stutzmann, O Ambacher, A Cros, M.S Brandt, H Angerer, R Dimitrov, N Reinacher, T Metzger, R Höpler, D Brunner, F Freudenberg, R Handschuh, Ch Deger

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 359 KB

english, 1997

23

MOVPE growth and characterization of AlxGa1-xN

S Ruffenach-Clur, O Briot, J.L Rouvière, B Gil, R.L Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 394 KB

english, 1997

24

A parametric study of AlN thin films grown by pulsed laser deposition

P Verardi, M Dinescu, C Stanciu, C Gerardi, L Mirenghi, V Sandu

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 129 KB

english, 1997

25

Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

S Karmann, H.P.D Schenk, U Kaiser, A Fissel, Wo Richter

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 798 KB

english, 1997

26

Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

J.L. Rouviere, M. Arlery, B. Daudin, G. Feuillet, O. Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 3.08 MB

english, 1997

27

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

P Ruterana, P Vermaut, V Potin, G Nouet, A Botchkarev, A Salvador, H Morkoç

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 804 KB

english, 1997

28

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

D Cherns, W.T Young, F.A Ponce

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 347 KB

english, 1997

29

Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD

A Olszyna, J Siwiec, R Dwiliński, M Kamińska, J Konwerska-Hrabowska, A Sokołowska

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 157 KB

english, 1997

30

Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations

Hyeon-Soo Kim, Yong-Hyuk Lee, Geun-Young Yeom, Jae-Won Lee, Tae-Il Kim

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 263 KB

english, 1997

31

Synthesis of AlN by reactive sputtering

F Randriamora, J.C Bruyère, A Deneuville

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 166 KB

english, 1997

32

On the role of thermal strain for micro-Raman determination of carrier concentrations in MOVPE-n-GaN

N Wieser, M Klose, R Dassow, G.C Rohr, F Scholz, J Off

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 163 KB

english, 1997

33

Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers

B Pécz, M.A di Forte-Poisson, L Tóth, G Radnóczi, G Huhn, V Papaioannou, J Stoemenos

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 944 KB

english, 1997

34

Radiation spectra in GaN-based LEDs under thermal-injection processes

S.V Svechnikov, P.Ph Oleksenko, G.A Sukach, P.S Smertenko, S.I Vlaskina, V.L Gromashevski

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 80 KB

english, 1997

35

Initial stages of growth of GaN over (0001) Al2O3 substrate using MBE: a crystallographic analysis of the defects

V Potin, P Ruterana, G Nouet

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 417 KB

english, 1997

36

Comparative study of hexagonal and cubic GaN growth by RF-MBE

G Feuillet, F Widmann, B Daudin, J Schuler, M Arlery, J.L Rouvière, N Pelekanos, O Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 619 KB

english, 1997

37

Optical nonlinearities of gallium nitride

H Haag, S Petit, P Gilliot, R Lévy, O Briot, R.L Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 103 KB

english, 1997

38

Role of the V/III precursor ratio on exciton dynamics in GaN MOCVD epilayers

P Lefebvre, J Allègre, S Ruffenach-Clur, O Briot, H Mathieu

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 106 KB

english, 1997

39

Quantum beat spectroscopy on excitons in GaN

R Zimmermann, M.R Hofmann, A Euteneuer, J Möbius, D Weber, W.W Rühle, E.O Göbel, B.K Meyer, H Amano, I Akasaki

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 104 KB

english, 1997

40

III–V nitrides: wurtzite symmetry and optical absorption

P. Bigenwald, P. Christol, L. Konczewicz, P. Testud, B. Gil

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 121 KB

english, 1997

41

In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

F Scholz, A Sohmer, J Off, V Syganow, A Dörnen, J.-S Im, A Hangleiter, H Lakner

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

42

Cathodoluminescence study of crystalline quality of (Al, In, Ga)N heterostructures

Q Liu, H Lakner, A Meinert, F Scholz, A Sohmer, E Kubalek

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 803 KB

english, 1997

43

Gain spectra in cw InGaN/GaN MQW laser diodes

T Deguchi, T Azuhata, T Sota, S Chichibu, S Nakamura

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 156 KB

english, 1997

44

Recombination dynamics of localized excitons in self-formed InGaN quantum dots

Yoichi Kawakami, Yukio Narukawa, Ken Sawada, Shin Saijyo, Shizuo Fujita, Shigeo Fujita, Shuji Nakamura

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 620 KB

english, 1997

45

Photostimulated emission of GaN layers and devices

K.P O'Donnell, M Umlauff, M Kraushaar, H Kalt, O Briot

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 85 KB

english, 1997

46

Investigations of selectively grown GaN/InGaN epitaxial layers

O Gfrörer, J Off, A Sohmer, F Scholz, A Hangleiter

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

47

RT-CW Operation of InGaN multi-quantum-well structure laser diodes

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 541 KB

english, 1997

48

The optical linewidth of InGaN light emitting diodes

P.G Middleton, K.P O'Donnell, T Breitkopf, H Kalt, W Van der Stricht, I Moerman, P Demeester

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 98 KB

english, 1997

49

Diffusion length of photoexcited carriers in GaN

J.Y Duboz, F Binet, D Dolfi, N Laurent, F Scholz, J Off, A Sohmer, O Briot, B Gil

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 163 KB

english, 1997

50

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy

B Beaumont, S Haffouz, P Gibart, M Leroux, Ph Lorenzini, E Calleja, E Muñoz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 190 KB

english, 1997

51

Electrical and optical properties of p-SiC/n-GaN heterostructures

M Topf, D Meister, I Dirnstorfer, G Steude, S Fischer, B.K Meyer, A Krtschil, H Witte, J Christen, T.U Kampen, W Mönch

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 371 KB

english, 1997

52

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

L.B Flannery, I Harrison, D.E Lacklison, R.I Dykeman, T.S Cheng, C.T Foxon

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 177 KB

english, 1997

53

GaN and AlGaN metal–semiconductor–metal photodetectors

I Ferguson, C.A Tran, R.F Karlicek Jr, Z.C Feng, R Stall, S Liang, Y Lu, C Joseph

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 203 KB

english, 1997

54

Comparison of wurtzite and zinc blende III–V nitrides field effect transistors: a 2D Monte Carlo device simulation

F Dessenne, D Cichocka, P Desplanques, R Fauquembergue

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 141 KB

english, 1997

55

Efficient and uniform production of III-nitride films by multiwafer MOVPE

M Deschler, R Beccard, B Wachtendorf, D Schmitz, H Juergensen

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 704 KB

english, 1997

56

2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots

B Daudin, F Widmann, G Feuillet, C Adelmann, Y Samson, M Arlery, J.L Rouvière

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 249 KB

english, 1997

57

Plasma assisted molecular beam epitaxy growth of GaN

S Einfeldt, U Birkle, C Thomas, M Fehrer, H Heinke, D Hommel

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 141 KB

english, 1997

58

Growth of GaN and AlN thin films by laser induced molecular beam epitaxy

M Gross, G Henn, H Schröder

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 339 KB

english, 1997

59

GaN thin films deposited by pulsed laser ablation in nitrogen and ammonia reactive atmospheres

D Cole, J.G Lunney

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 122 KB

english, 1997

60

Characterization of GaN epitaxial layers on SiC substrates with AlxGa1−xN buffer layers

C.F Lin, H.C Cheng, M.S Feng, G.C Chi

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 143 KB

english, 1997

61

DRIFTS characterization of a nanostructured gallium nitride powder and its interactions with organic molecules

Marie-Isabelle Baraton, Greg Carlson, Kenneth E Gonsalves

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 147 KB

english, 1997

62

Caracterization of AIN buffer layers on (0001)-sapphire substrates

Y.M. Le Vaillant, R. Bisaro, J. Olivier, O. Durand, J.Y. Duboz, S. Ruffenach-Clur, O. Briot, B. Gil, R.L. Aulombard

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 215 KB

english, 1997

63

EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides

A.V Blant, T.S Cheng, N.J Jeffs, C.T Foxon, C Bailey, P.G Harrison, A.J Dent, J.F.W Mosselmans

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 205 KB

english, 1997

64

Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method

R Dwiliński, R Doradziński, J Garczyński, L Sierzputowski, J.M Baranowski, M Kamińska

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 189 KB

english, 1997

65

Index

Journal:

Materials Science and Engineering: B

Year:

1997

File:

PDF, 37 KB

1997

66

Index

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 54 KB

english, 1997