Growth of atomically smooth AlN films with a 5:4...

Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

H.P.D. Schenk, U. Kaiser, G.D. Kipshidze, A. Fissel, J. Kräußlich, H. Hobert, J. Schulze, Wo. Richter
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00328-6
File:
PDF, 836 KB
english, 1999
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