Volume 59; Issue 1-3

Materials Science and Engineering: B

Volume 59; Issue 1-3

1

GaN microcavities and Bragg reflectors: giant exciton–light coupling

Alexey Kavokin, Bernard Gil

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 93 KB

english, 1999

2

Lattice dynamics of boron nitride

H.W. Leite Alves, J.L.A. Alves, J.L.P. Castineira, J.R. Leite

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 224 KB

english, 1999

3

Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

H.P.D. Schenk, U. Kaiser, G.D. Kipshidze, A. Fissel, J. Kräußlich, H. Hobert, J. Schulze, Wo. Richter

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 836 KB

english, 1999

4

Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

F Bertram, T Riemann, J Christen, A Kaschner, A Hoffmann, K Hiramatsu, T Shibata, N Sawaki

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 801 KB

english, 1999

5

Luminescence in III-nitrides

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 292 KB

english, 1999

6

The emission spectrum of pulsed laser deposited GaN and its powder precursor

P.G. Middleton, K.P. O’Donnell, C. Trager-Cowan, D. Cole, M. Cazzanelli, J. Lunney

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 344 KB

english, 1999

7

Luminescent properties of GaN thin films prepared by pulsed laser deposition

M. Cazzanelli, C. Vinegoni, D. Cole, J.G. Lunney, P.G. Middleton, C. Trager-Cowan, K.P. O’Donnell, L. Pavesi

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

8

Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE

M Gross, G Henn, J Ziegler, P Allenspacher, C Cychy, H Schröder

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 129 KB

english, 1999

9

Ultrafast physics in nitrides

M.R Hofmann, R Zimmermann, D Hägele, M Oestreich, W.W Rühle

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

10

Pulsed laser deposition of GaN thin films

M Cazzanelli, D Cole, J Versluijs, J.F Donegan, J.G Lunney

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 353 KB

english, 1999

11

Time-resolved laser spectroscopy of nitride semiconductors

Frederick H. Long, Milan Pophristic, Chuong Tran, Robert F. Kalicek Jr., Zhe Chuan Feng, Ian Ferguson

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 97 KB

english, 1999

12

Influence of strain and buffer layer type on In incorporation during GaInN MOVPE

F Scholz, J Off, A Kniest, L Görgens, O Ambacher

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 136 KB

english, 1999

13

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Kazumasa Hiramatsu, Hidetada Matsushima, Takumi Shibata, Yasutoshi Kawagachi, Nobuhiko Sawaki

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.06 MB

english, 1999

14

Large and composition-dependent band gap bowing in InxGa1−xN alloys

Chris G Van de Walle, M.D McCluskey, C.P Master, L.T Romano, N.M Johnson

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 91 KB

english, 1999

15

Compositional inhomogeneities in InGaN studied by transmission electron microscopy and spatially resolved cathodoluminescence

H Selke, M Amirsawadkouhi, P.L Ryder, T Böttcher, S Einfeldt, D Hommel, F Bertram, J Christen

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 311 KB

english, 1999

16

A tunable blue light emission of InGaN/GaN quantum well through thermal interdiffusion

Michael C.Y. Chan, Elaine M.T. Cheung, E.Herbert. Li

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

17

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

K.P. O’Donnell, R.W. Martin, P.G. Middleton, S.C. Bayliss, I. Fletcher, W. Van der Stricht, P. Demeester, I. Moerman

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 535 KB

english, 1999

18

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

G. Nataf, B. Beaumont, A. Bouillé, P. Vennéguès, S. Haffouz, M. Vaille, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.79 MB

english, 1999

19

Highly textured hexagonal AlN films deposited at low temperature by reactive cathodic sputerring

F. Brunet, F. Randriamora, A. Deneuville, P. Germi, B. Anterion, M. Pernet

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

20

Properties of strained and unstrained III-nitrides

J.-M. Wagner, G. Portisch, K. Karch, F. Bechstedt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 131 KB

english, 1999

21

Doping of AlxGa1−xN alloys

C Stampfl, J Neugebauer, Chris G Van de Walle

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 108 KB

english, 1999

22

Theoretical LEED parameters for the zinc-blende GaN (110) surface

H.W. Leite Alves, J.L.A. Alves, J.L.F. da Silva, J.R. Leite, R.A. Nogueira

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

23

GaN-based laser diode with focused ion beam-etched mirrors

C. Ambe, T. Takeuchi, H. Katoh, K. Isomura, T. Satoh, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, N. Yamada

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 312 KB

english, 1999

24

Optically pumped GaInN/GaN-DFB lasers: overgrown lasers and vertical modes

R Hofmann, V Wagner, M Neuner, J Off, F Scholz, H Schweizer

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

25

Thermal stability of WSix and W ohmic contacts on GaN

X.A Cao, S.J Pearton, S.M Donovan, C.R Abernathy, F Ren, J.C Zolper, M.W Cole, A Zeitouny, M Eizenberg, R.J Shul, A.G Baca

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 130 KB

english, 1999

26

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

P Schlotter, J Baur, Ch Hielscher, M Kunzer, H Obloh, R Schmidt, J Schneider

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 465 KB

english, 1999

27

The analysis of contact resistivity between a p-type GaN layer and electrode in InGaN MQW laser diodes

Masaaki Onomura, Shinji Saito, Lisa Sugiura, Mikio Nakasuji, Katsunobu Sasanuma, Johji Nishio, John Rennie, Shin-ya Nunoue, Kazuhiko Itaya

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

28

InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 211 KB

english, 1999

29

Theoretical optical gain in InGaN quantum wells

Takeshi Uenoyama, Masakazu Suzuki

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 155 KB

english, 1999

30

Microwave electronics device applications of AlGaN/GaN heterostructures

Q Chen, J.W Yang, M Blasingame, C Faber, A.T Ping, I Adesida

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 266 KB

english, 1999

31

Low pressure MOVPE grown AlGaN for UV photodetector applications

F. Omnes, N. Marenco, S. Haffouz, H. Lahreche, P. de Mierry, B. Beaumont, P. Hageman, E. Monroy, F. Calle, E. Muñoz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 198 KB

english, 1999

32

The optical and structural properties of InGaN epilayers with very high indium content

S.C Bayliss, P Demeester, I Fletcher, R.W Martin, P.G Middleton, I Moerman, K.P O’Donnell, A Sapelkin, C Trager-Cowan, W Van Der Stricht, C Young

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 368 KB

english, 1999

33

Optical properties of InGaN quantum wells

S.F Chichibu, A.C Abare, M.P Mack, M.S Minsky, T Deguchi, D Cohen, P Kozodoy, S.B Fleischer, S Keller, J.S Speck, J.E Bowers, E Hu, U.K Mishra, L.A Coldren, S.P DenBaars, K Wada, T Sota, S Nakamura

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 264 KB

english, 1999

34

Recombination dynamics of excitons in III-nitride layers and quantum wells

P Lefebvre, J Allègre, H Mathieu

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 164 KB

english, 1999

35

Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

Jin Seo Im, H Kollmer, J Off, F Scholz, A Hangleiter

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 171 KB

english, 1999

36

MBE GaN grown on (101) NdGaO3 substrates

V.V. Mamutin, A.A. Toropov, N.F. Kartenko, S.V. Ivanov, A. Wagner, B. Monemar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 105 KB

english, 1999

37

Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wells

Axel Göldner, Axel Hoffmann, Bernard Gil, Pierre Lefebvre, Pierre Bigenwald, Philippe Christol, Hadis Morkoç

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

38

High speed growth of device quality GaN and InGaN by RF-MBE

Kouichi Kushi, Hajime Sasamoto, Daisuke Sugihara, Shinichi Nakamura, Akihiko Kikuchi, Katsumi Kishino

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 139 KB

english, 1999

39

Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs

S Shokhovets, R Goldhahn, G Gobsch, T.S Cheng, C.T Foxon

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 113 KB

english, 1999

40

Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Oliver Brandt, Jochen R Müllhaüser, Achim Trampert, Klaus H Ploog

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 378 KB

english, 1999

41

Coaxial rf-magnetron nitrogen activator for GaN MBE growth

V.N. Jmerik, V.V. Mamutin, V.A. Vekshin, T.V. Shubina, S.V. Ivanov, P.S. Kop’ev

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 107 KB

english, 1999

42

Arsenic on cubic GaN surfaces: surfactant effect versus incorporation

G Feuillet, H Hamaguchi, H Okumura, S Yoshida

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 92 KB

english, 1999

43

Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions

Valery Y. Davydov, Igor N. Goncharuk, Marina V. Baidakova, Alexander N. Smirnov, Arsen V. Subashiev, Jochen Aderhold, Jens Stemmer, Thomas Rotter, Dirk Uffmann, Olga Semchinova

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 122 KB

english, 1999

44

Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

A Krtschil, M Lisker, H Witte, J Christen, U Birkle, S Einfeldt, D Hommel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

45

Secondary ion mass spectrometry analysis of Mg doped GaN films prepared by hot wall epitaxy

A Ishida, K Matsuda, S Chu, F Tanoue, S Sakakibara, K Ishino, S Fuke, H Fujiyasu

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

46

GaN epilayers on misoriented substrates

C. Trager-Cowan, S. McArthur, P.G. Middleton, K.P. O’Donnell, D. Zubia, S.D. Hersee

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 293 KB

english, 1999

47

Deposition of c-BN films on diamond: influence of the diamond roughness

J Pascallon, V Stambouli, S Ilias, D Bouchier, G Nouet, F Silva, A Gicquel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 709 KB

english, 1999

48

Electro-optical characterization of h-BN thin film waveguides by prism coupling technique

J. Boudiombo, J.C. Loulergue, A. Bath, P. Thevenin

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 169 KB

english, 1999

49

Carrier capture in InGaN quantum wells and hot carrier effects in GaN

F. Binet, J.Y. Duboz, C. Grattepain, F. Scholz, J. Off

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 402 KB

english, 1999

50

Self organization of nitride quantum dots by molecular beam epitaxy

B Daudin, F Widmann, G Feuillet, Y Samson, J.L Rouvière, N Pelekanos

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 498 KB

english, 1999

51

Fabrication and photoluminescence of GaN/sapphire submicron-scale structures with nanometre scale resolution

A Ribayrol, D Coquillat, R.M De La Rue, S.K Murad, C.D.W Wilkinson, P Girard, O Briot, R.L Aulombard

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 300 KB

english, 1999

52

Novel plasma chemistries for highly selective dry etching of InxGaN1−x: BI3 and BBr3

Hyun Cho, J Hong, T Maeda, S.M Donovan, C.R Abernathy, S.J Pearton, R.J Shul

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 163 KB

english, 1999

53

Ion beam sputter etching of galliumnitride grown by chloride transport LP–CVD

Michael Topf, Fehmi Cavas, Bruno K Meyer, Bertilo Kempf, Walter Betz, Peter Veit

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 449 KB

english, 1999

54

Smooth GaN surfaces by photoinduced electro-chemical etching

T Rotter, J Aderhold, D Mistele, O Semchinova, J Stemmer, D Uffmann, J Graul

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 646 KB

english, 1999

55

Photo-assisted anodic etching of GaN films in NaOH electrolyte with Cl ions

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 158 KB

english, 1999

56

W and W/WSi/In1−xAlxN ohmic contacts to n-type GaN

A Zeitouny, M Eizenberg, S.J Pearton, F Ren

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

57

In situ real time ellipsometry monitoring during GaN epilayers processing

M Losurdo, P Capezzuto, G Bruno

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 233 KB

english, 1999

58

Probing the local dielectric/optical properties of group III-Nitrides by spatially resolved EELS on the nanometer scale

G Brockt, H Lakner

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 192 KB

english, 1999

59

Optical anisotropy in GaN grown onto A–plane sapphire

Andenet Alemu, Michel Julier, Javier Campo, Bernard Gil, Denis Scalbert, Jean-Paul Lascaray, Shuji Nakamura

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 118 KB

english, 1999

60

Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence

A. Hoffmann, J. Holst, A. Kaschner, H. Siegle, J. Christen, P. Fischer, F. Bertram, K. Hiramatsu

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 141 KB

english, 1999

61

Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

F Huet, M.-A di Forte-Poisson, A Romann, M Tordjman, J di Persio, B Pecz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 171 KB

english, 1999

62

X-ray analysis of the texture of heteroepitaxial gallium nitride films

N Herres, H Obloh, K.H Bachem, K Helming

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 429 KB

english, 1999

63

Annealing behavior and lattice site location of Hf implanted GaN

E. Alves, M.F. da Silva, J.G. Marques, J.C. Soares, K. Freitag

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 132 KB

english, 1999

64

Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes

W Götz, R.S Kern, C.H Chen, H Liu, D.A Steigerwald, R.M Fletcher

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 136 KB

english, 1999

65

EXAFS studies of Mg doped InN grown on Al2O3

A.V Blant, T.S Cheng, N.J Jeffs, L.B Flannery, I Harrison, J.F.W Mosselmans, A.D Smith, C.T Foxon

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

66

Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBE

Pierre Ruterana, Valérie Potin, Gérard Nouet, Roland Bonnet, Marc Loubradou

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 881 KB

english, 1999

67

Analysis of composition fluctuations in AlxGa1−xN

B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann, M. Albrecht, H.P. Strunk

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 308 KB

english, 1999

68

Effect of Si doping on structural, photoluminescence and electrical properties of GaN

N.M. Shmidt, A.V. Lebedev, W.V. Lundin, B.V. Pushnyi, V.V. Ratnikov, T.V. Shubina, A.A. Tsatsul’nikov, A.S. Usikov, G. Pozina, B. Monemar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 83 KB

english, 1999

69

Preface

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 33 KB

english, 1999

70

High pressure fabrication and processing of GaN:Mg

T Suski, J Jun, M Leszczynski, H Teisseyre, I Grzegory, S Porowski, G Dollinger, K Saarinen, T Laine, J Nissilä, W Burkhard, W Kriegseis, B.K Meyer

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 276 KB

english, 1999

71

Growth of GaN single crystal substrates

Olga Kryliouk, Mike Reed, Todd Dann, Tim Anderson, Bruce Chai

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 436 KB

english, 1999

72

Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN

Jeong-wook Lee, Ho-sun Paek, Ji-Beom Yoo, Gyeung-ho Kim, Dong-Wha Kum

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 272 KB

english, 1999

73

The influence of MOCVD process scheme on the optical properties of GaN layers

M Ciorga, L Bryja, J Misiewicz, R Paszkiewicz, R Korbutowicz, M Panek, B Paszkiewicz, M Tłaczała

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 97 KB

english, 1999

74

Tertiarybutylhydrazine: a new precursor for the MOVPE of Group III-nitrides

U.W Pohl, C Möller, K Knorr, W Richter, J Gottfriedsen, H Schumann, K Rademann, A Fielicke

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 354 KB

english, 1999

75

TEM study of 101̄0 inversion domains in GaN layers grown on (0001) sapphire substrate

V. Potin, P. Ruterana, G. Nouet

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 452 KB

english, 1999

76

Observation of ordering and phase separation in InxGa1−xN layers

P Ruterana, F Deniel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.53 MB

english, 1999

77

Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN

A Wenzel, C Liu, B Rauschenbach

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 107 KB

english, 1999

78

Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.

P de Mierry, H Lahreche, S Haffouz, P Vennéguès, B Beaumont, F Omnès, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 892 KB

english, 1999

79

LP-MOCVD growth of GaN on silicon substrates—comparison between AlAs and ZnO nucleation layers

A Strittmatter, A Krost, V Türck, M Straßburg, D Bimberg, J Bläsing, T Hempel, J Christen, B Neubauer, D Gerthsen, T Christmann, B.K Meyer

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 340 KB

english, 1999

80

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

D.P Bour, M Kneissl, D Hofstetter, L.T Romano, M McCluskey, C.G Van de Walle, B.S Krusor, C Dunnrowicz, R Donaldson, J Walker, N.M Johnson

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 251 KB

english, 1999

81

Optical properties of cubic GaN grown on SiC/Si substrates

A Philippe, C Bru-Chevallier, M Vernay, G Guillot, J Hübner, B Daudin, G Feuillet

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 124 KB

english, 1999

82

Molecular beam epitaxy growth of nitride materials

N Grandjean, J Massies

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 487 KB

english, 1999

83

Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

V Kirchner, R Ebel, H Heinke, S Einfeldt, D Hommel, H Selke, P.L Ryder

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 288 KB

english, 1999

84

Chemical beam epitaxy of GaN on (0001) sapphire substrate

M. Kappers, J.-L. Guyaux, J. Olivier, R. Bisaro, C. Grattepain, J.-C. Garcia

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 341 KB

english, 1999

85

Index

Journal:

Materials Science and Engineering: B

Year:

1999

File:

PDF, 39 KB

1999

86

Index

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 73 KB

english, 1999

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