Selective area growth and epitaxial lateral overgrowth of...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Kazumasa Hiramatsu, Hidetada Matsushima, Takumi Shibata, Yasutoshi Kawagachi, Nobuhiko Sawaki
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Volume:
59
Year:
1999
Language:
english
Pages:
8
DOI:
10.1016/s0921-5107(98)00339-0
File:
PDF, 1.06 MB
english, 1999
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