High quality ELO-GaN layers on GaN/Al2O3 patterned...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

G. Nataf, B. Beaumont, A. Bouillé, P. Vennéguès, S. Haffouz, M. Vaille, P. Gibart
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Volume:
59
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(98)00344-4
File:
PDF, 1.79 MB
english, 1999
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