Fabrication and characterization of GaN/InGaN/AlGaN double...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

P Schlotter, J Baur, Ch Hielscher, M Kunzer, H Obloh, R Schmidt, J Schneider
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Volume:
59
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(98)00352-3
File:
PDF, 465 KB
english, 1999
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