Carrier confinement in GaInN/AlGaN/GaN quantum wells with...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

Jin Seo Im, H Kollmer, J Off, F Scholz, A Hangleiter
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00361-4
File:
PDF, 171 KB
english, 1999
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