High speed growth of device quality GaN and InGaN by RF-MBE

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

High speed growth of device quality GaN and InGaN by RF-MBE

Kouichi Kushi, Hajime Sasamoto, Daisuke Sugihara, Shinichi Nakamura, Akihiko Kikuchi, Katsumi Kishino
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00365-1
File:
PDF, 139 KB
english, 1999
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