Properties of cubic (In,Ga)N grown by molecular beam...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Oliver Brandt, Jochen R Müllhaüser, Achim Trampert, Klaus H Ploog
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Volume:
59
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0921-5107(98)00367-5
File:
PDF, 378 KB
english, 1999
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