Characterization of optical induced defect-band-transitions...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

A Krtschil, M Lisker, H Witte, J Christen, U Birkle, S Einfeldt, D Hommel
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00371-7
File:
PDF, 145 KB
english, 1999
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