Secondary ion mass spectrometry analysis of Mg doped GaN...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Secondary ion mass spectrometry analysis of Mg doped GaN films prepared by hot wall epitaxy

A Ishida, K Matsuda, S Chu, F Tanoue, S Sakakibara, K Ishino, S Fuke, H Fujiyasu
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Volume:
59
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(98)00372-9
File:
PDF, 154 KB
english, 1999
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