Novel plasma chemistries for highly selective dry etching...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Novel plasma chemistries for highly selective dry etching of InxGaN1−x: BI3 and BBr3

Hyun Cho, J Hong, T Maeda, S.M Donovan, C.R Abernathy, S.J Pearton, R.J Shul
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Volume:
59
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(98)00379-1
File:
PDF, 163 KB
english, 1999
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