Modelling of the defect structure in GaN MOCVD thin films...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

F Huet, M.-A di Forte-Poisson, A Romann, M Tordjman, J di Persio, B Pecz
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00390-0
File:
PDF, 171 KB
english, 1999
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