Hall-effect characterization of III–V nitride...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes

W Götz, R.S Kern, C.H Chen, H Liu, D.A Steigerwald, R.M Fletcher
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Volume:
59
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0921-5107(98)00393-6
File:
PDF, 136 KB
english, 1999
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