Effect of Si doping on structural, photoluminescence and...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

Effect of Si doping on structural, photoluminescence and electrical properties of GaN

N.M. Shmidt, A.V. Lebedev, W.V. Lundin, B.V. Pushnyi, V.V. Ratnikov, T.V. Shubina, A.A. Tsatsul’nikov, A.S. Usikov, G. Pozina, B. Monemar
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Volume:
59
Year:
1999
Language:
english
Pages:
3
DOI:
10.1016/s0921-5107(98)00400-0
File:
PDF, 83 KB
english, 1999
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