TEM study of 101̄0 inversion domains in GaN layers grown on...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

TEM study of 101̄0 inversion domains in GaN layers grown on (0001) sapphire substrate

V. Potin, P. Ruterana, G. Nouet
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00407-3
File:
PDF, 452 KB
english, 1999
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