LP-MOCVD growth of GaN on silicon substrates—comparison...

Materials Science and Engineering: B 1999 Vol. 59; Iss. 1-3

LP-MOCVD growth of GaN on silicon substrates—comparison between AlAs and ZnO nucleation layers

A Strittmatter, A Krost, V Türck, M Straßburg, D Bimberg, J Bläsing, T Hempel, J Christen, B Neubauer, D Gerthsen, T Christmann, B.K Meyer
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Volume:
59
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00411-5
File:
PDF, 340 KB
english, 1999
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