![](/img/cover-not-exists.png)
Near-thermal equilibrium growth of SiC by physical vapor transport
Norbert Schulze, Donovan L. Barrett, Gerhard Pensl, Stefan Rohmfeld, Martin HundhausenVolume:
61-62
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(98)00442-5
File:
PDF, 196 KB
english, 1999