Volume 61-62; Issue none

Materials Science and Engineering: B

Volume 61-62; Issue none

1

Progress in SiC: from material growth to commercial device development

C.H. Carter, Jr., V.F. Tsvetkov, R.C. Glass, D. Henshall, M. Brady, St.G. Müller, O. Kordina, K. Irvine, J.A. Edmond, H.-S. Kong, R. Singh, S.T. Allen, J.W. Palmour

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 348 KB

english, 1999

2

Advances in SiC materials and devices: an industrial point of view

R.R Siergiej, R.C Clarke, S Sriram, A.K Agarwal, R.J Bojko, A.W Morse, V Balakrishna, M.F MacMillan, A.A Burk, Jr, C.D Brandt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 989 KB

english, 1999

3

State of the art in the modelling of SiC sublimation growth

M Pons, M Anikin, K Chourou, J.M Dedulle, R Madar, E Blanquet, A Pisch, C Bernard, P Grosse, C Faure, G Basset, Y Grange

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.78 MB

english, 1999

4

Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

Dieter H Hofmann, Matthias H Müller

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.06 MB

english, 1999

5

Transport phenomena in sublimation growth of SiC bulk crystals

A.S Segal, A.N Vorob’ev, S.Yu Karpov, Yu.N Makarov, E.N Mokhov, M.G Ramm, M.S Ramm, A.D Roenkov, Yu.A Vodakov, A.I Zhmakin

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 131 KB

english, 1999

6

Near-thermal equilibrium growth of SiC by physical vapor transport

Norbert Schulze, Donovan L. Barrett, Gerhard Pensl, Stefan Rohmfeld, Martin Hundhausen

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 196 KB

english, 1999

7

Analysis on defect generation during the SiC bulk growth process

D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P.J. Wellmann, A. Winnacker

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 766 KB

english, 1999

8

Seeded sublimation growth of 6H and 4H–SiC crystals

R. Yakimova, M. Syväjärvi, M. Tuominen, T. Iakimov, P. Råback, A. Vehanen, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 226 KB

english, 1999

9

Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

P Grosse, G Basset, C Calvat, M Couchaud, C Faure, B Ferrand, Y Grange, M Anikin, J.M Bluet, K Chourou, R Madar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

10

Coherent X-ray imaging investigation of macrodefects and micropipes on SiC

S Milita, R Madar, J Baruchel, M Anikin, T Argunova

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 833 KB

english, 1999

11

Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method

H.-J Rost, D Siche, J Dolle, W Eiserbeck, T Müller, D Schulz, G Wagner, J Wollweber

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 207 KB

english, 1999

12

Influence of growth conditions on the defect formation in SiC ingots

M Anikin, K Chourou, M Pons, J.M Bluet, R Madar, P Grosse, C Faure, G Basset, Y Grange

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 472 KB

english, 1999

13

Features of SiC single-crystals grown in vacuum using the LETI method

V.P Rastegaev, D.D Avrov, S.A Reshanov, A.O Lebedev

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 285 KB

english, 1999

14

Modelling of SiC sublimation growth process: analyses of macrodefects formation

K Chourou, M Anikin, J.M Bluet, J.M Dedulle, R Madar, M Pons, E Blanquet, C Bernard, P Grosse, C Faure, G Basset, Y Grange

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 241 KB

english, 1999

15

A practical model for estimating the growth rate in sublimation growth of SiC

P Råback, R Yakimova, M Syväjärvi, R Nieminen, E Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 241 KB

english, 1999

16

Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

M Selder, L Kadinski, F Durst, T Straubinger, D Hofmann

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

17

Thermodynamical calculations on the chemical vapour transport of silicon carbide

D Chaussende, Y Monteil, P Aboughe-nze, C Brylinski, J Bouix

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 159 KB

english, 1999

18

Analysis of electronic levels in SiC: V, N, Al powders and crystals using thermally stimulated luminescence

W Hartung, M Rasp, D Hofmann, A Winnacker

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 174 KB

english, 1999

19

Optimization of sublimation growth of SiC bulk crystals using modeling

M.S Ramm, E.N Mokhov, S.E Demina, M.G Ramm, A.D Roenkov, Yu.A Vodakov, A.S Segal, A.N Vorob’ev, S.Yu Karpov, A.V Kulik, Yu.N Makarov

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 537 KB

english, 1999

20

Oxidation of 6H silicon carbide in carbon containing atmosphere

Kai Christiansen, Michael Bassler, Thomas Dalibor, Reinhard Helbig

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 296 KB

english, 1999

21

Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation

M. Bassler, G. Pensl

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

22

Electrical characterization of 6H–SiC enhancement-mode MOSFETs at high temperatures

U Schmid, S.T Sheppard, W Wondrak, E Niemann

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 273 KB

english, 1999

23

Design of a 600 V silicon carbide vertical power MOSFET

D Planson, M.L Locatelli, F Lanois, J.P Chante

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 214 KB

english, 1999

24

Characterization of an enhanced thermal oxide layer on 6H–SiC using ion irradiation

T Yoneda, T Nakata, M Watanabe, M Kitabatake

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 464 KB

english, 1999

25

Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 3.64 MB

english, 1999

26

Heteroepitaxial growth of 3C-SiC on SOI for sensor applications

G Krötz, H Möller, M Eickhoff, S Zappe, R Ziermann, E Obermeier, J Stoemenos

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 860 KB

english, 1999

27

Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer

S Zappe, E Obermeier, J Stoemenos, H Möller, G Krötz, H Wirth, W Skorupa

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 360 KB

english, 1999

28

Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon

J Scheiner, R Goldhahn, V Cimalla, G Ecke, W Attenberger, J.K.M Lindner, G Gobsch, J Pezoldt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 431 KB

english, 1999

29

Vibrational study on the carbonization of Si surface

I Kamata, H Tsuchida, T Jikimoto, K Izumi

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

30

The physics of heteroepitaxy of 3C–SiC on Si: role of Ge in the optimization of the 3C–SiC/Si heterointerface

P Masri, N Moreaud, M Rouhani Laridjani, J Calas, M Averous, G Chaix, A Dollet, R Berjoan, C Dupuy

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 87 KB

english, 1999

31

The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD

V. Papaioannou, H. Möller, M. Rapp, L. Vogelmeier, M. Eickhoff, G. Krötz, J. Stoemenos

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 347 KB

english, 1999

32

Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si

W Attenberger, J Lindner, V Cimalla, J Pezoldt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.11 MB

english, 1999

33

Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

E. Hurtós, J. Rodrı́guez-Viejo, J. Bassas, M.T. Clavaguera-Mora, K. Zekentes

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 334 KB

english, 1999

34

Influence of the heating ramp on the heteroepitaxial growth of SiC on Si

V Cimalla, Th Stauden, G Eichhorn, J Pezoldt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 3.55 MB

english, 1999

35

CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure

F Wischmeyer, W Wondrak, D Leidich, E Niemann

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 236 KB

english, 1999

36

Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy

H Möller, M Eickhoff, L Vogelmeier, M Rapp, G Krötz, V Papaioannou, J Stoemenos

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 255 KB

english, 1999

37

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

F Namavar, P.C Colter, N Planes, B Fraisse, J Pernot, S Juillaguet, J Camassel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 474 KB

english, 1999

38

High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

R Ziermann, J von Berg, E Obermeier, F Wischmeyer, E Niemann, H Möller, M Eickhoff, G Krötz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 306 KB

english, 1999

39

Heteroepitaxial growth of 3C–SiC using HMDS by atmospheric CVD

Y Chen, K Matsumoto, Y Nishio, T Shirafuji, S Nishino

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 255 KB

english, 1999

40

Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer

Crawford Taylor, Ebenezer Eshun, M.G Spencer, K.D Hobart, F.J Kub

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 412 KB

english, 1999

41

Role of SIMOX defects on the structural properties of β-SiC/SIMOX

G Ferro, N Planes, V Papaioannou, D Chaussende, Y Monteil, Y Stoemenos, J Camassel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 780 KB

english, 1999

42

Electronic structure of the anti-structure pair in 3C–SiC

L Torpo, R.M Nieminen

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 79 KB

english, 1999

43

High temperature CVD growth of SiC

A. Ellison, J. Zhang, J. Peterson, A. Henry, Q. Wahab, J.P. Bergman, Y.N. Makarov, A. Vorob’ev, A. Vehanen, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 738 KB

english, 1999

44

Epitaxial growth of 4H–SiC by sublimation close space technique

S Nishino, K Matsumoto, T Yoshida, Y Chen, S.K Lilov

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 253 KB

english, 1999

45

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.

R. Rupp, A. Wiedenhofer, D. Stephani

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 538 KB

english, 1999

46

Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates

N. Nordell, S. Karlsson, A.O. Konstantinov

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 787 KB

english, 1999

47

High-temperature surface structure transitions and growth of α-SiC (0001) in ultrahigh vacuum

T. Hatayama, S. Nakamura, K. Kurobe, T. Kimoto, T. Fuyuki, H. Matsunami

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 364 KB

english, 1999

48

Epitaxial growth of SiC-heterostructures on α-SiC(0001) by solid-source MBE

A. Fissel, U. Kaiser, J. Kräußlich, K. Pfennighaus, B. Schröter, J. Schulz, W. Richter

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 450 KB

english, 1999

49

Epitaxial growth of SiC in a new multi-wafer VPE reactor

S Karlsson, N Nordell, F Spadafora, M Linnarsson

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 124 KB

english, 1999

50

Purity and surface structure of thick 6H and 4H SiC layers grown by sublimation epitaxy

M. Syväjärvi, R. Yakimova, E.A.M. Johansson, A. Henry, Q. Wahab, C. Hallin, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 229 KB

english, 1999

51

Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence

J Zhang, A Ellison, A Henry, M.K Linnarsson, E Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

52

Close compensation of 6H and 4H silicon carbide by silicon-to-carbon ratio control

Michael S Mazzola, Stephen E Saddow, Adolf Schöner

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

53

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

S.E Saddow, M.S Mazzola, S.V Rendakova, V.A Dmitriev

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 804 KB

english, 1999

54

Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers

M. Syväjärvi, R. Yakimova, A. Kakanakova-Georgieva, M.F. MacMillan, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 258 KB

english, 1999

55

New results in sublimation growth of the SiC epilayers

N.S. Savkina, A.A. Lebedev, D.V. Davydov, A.M. Strel’chuk, A.S. Tregubova, M.A. Yagovkina

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 209 KB

english, 1999

56

Domain misorientation in sublimation grown 4H SiC epitaxial layers

M. Tuominen, R. Yakimova, M. Syväjärvi, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 268 KB

english, 1999

57

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

A.N. Vorob’ev, Yu.E. Egorov, Yu.N. Makarov, A.I. Zhmakin, A.O. Galyukov, R. Rupp

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 322 KB

english, 1999

58

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

A.N Vorob’ev, A.E Komissarov, A.S Segal, Yu.N Makarov, S.Yu Karpov, A.I Zhmakin, R Rupp

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 90 KB

english, 1999

59

X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H–SiC substrates

A Bauer, J Kräusslich, B Köcher, K Goetz, A Fissel, W Richter

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 271 KB

english, 1999

60

Investigation of 6H–SiC site competition epitaxy the silane–methane–hydrogen gas system

V.V Zelenin, A.A Lebedev, M.G Rastegaeva, D.V Davidov, V.E Chelnokov, M.L Korogodskii

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 94 KB

english, 1999

61

Neutral aluminum and gallium four particle complexes in silicon carbide polytypes

R.P. Devaty, W.J. Choyke, S.G. Sridhara, L.L. Clemen

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 215 KB

english, 1999

62

Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

V. Grivickas, J. Linnros, P. Grivickas, A. Galeckas

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 132 KB

english, 1999

63

Carbon-vacancy related defects in 4H- and 6H-SiC

N.T. Son, W.M. Chen, J.L. Lindström, B. Monemar, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 147 KB

english, 1999

64

Stable surface reconstructions on 6H–SiC(0001̄)

J. Bernhardt, M. Nerding, U. Starke, K. Heinz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 305 KB

english, 1999

65

Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes

J.M Bluet, K Chourou, M Anikin, R Madar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 257 KB

english, 1999

66

High-precision determination of atomic positions in 4H– and 6H–SiC crystals

A. Bauer, J. Kräusslich, P. Kuschnerus, K. Goetz, P. Käckell, F. Bechstedt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 162 KB

english, 1999

67

Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer

H Yamaguchi, S Nishizawa, W Bahng, K Fukuda, S Yoshida, K Arai, Y Takano

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.40 MB

english, 1999

68

A model for doping-induced band gap narrowing in 3C-, 4H-, and 6H-SiC

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 113 KB

english, 1999

69

Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

S.G Sridhara, T.J Eperjesi, R.P Devaty, W.J Choyke

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 189 KB

english, 1999

70

Photoluminescence of 4H-SiC: some remarks

A. Henry, I.G. Ivanov, A. Ellison, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 150 KB

english, 1999

71

Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

A Galeckas, J Linnros, M Frischholz, K Rottner, N Nordell, S Karlsson, V Grivickas

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 323 KB

english, 1999

72

Monovacancies in 3C and 4H SiC

J Furthmüller, A Zywietz, F Bechstedt

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

73

Electrical and optical characterisation of vanadium in 4H and 6H–SiC

V Lauer, G Brémond, A Souifi, G Guillot, K Chourou, M Anikin, R Madar, B Clerjaud, C Naud

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

74

Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

E Neyret, G Ferro, S Juillaguet, J.M Bluet, C Jaussaud, J Camassel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 202 KB

english, 1999

75

Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport

J Camassel, S Juillaguet, N Planes, A Raymond, P Grosse, G Basset, C Faure, M Couchaud, J.M Bluet, K Chourou, M Anikin, R Madar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 202 KB

english, 1999

76

Photoluminescence excitation spectra of the free exciton emission in 6H–SiC

I.G Ivanov, T Egilsson, A Henry, E Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

77

Characterization of sputtered titanium silicide ohmic contacts on n-type 6H-silicon carbide

R Getto, J Freytag, M Kopnarski, H Oechsner

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 234 KB

english, 1999

78

Diffusion of light elements in 4H– and 6H–SiC

M.K. Linnarsson, M.S. Janson, S. Karlsson, A. Schöner, N. Nordell, B.G. Svensson

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 152 KB

english, 1999

79

Annealing ion implanted SiC with an AlN cap

K.A Jones, P.B Shah, K.W Kirchner, R.T Lareau, M.C Wood, M.H Ervin, R.D Vispute, R.P Sharma, T Venkatesan, O.W Holland

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 611 KB

english, 1999

80

Monte Carlo simulation of THz frequency power generation in notched n+–n−–n–n+ 4H-SiC structures

Jian H Zhao, V Gruzinskis, R Mickevicius, P Shiktorov, E Starikov

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 111 KB

english, 1999

81

Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

L Kassamakova, R Kakanakov, N Nordell, S Savage, A Kakanakova-Georgieva, Ts Marinova

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

82

Study of annealing conditions on the formation of ohmic contacts on p+ 4H–SiC layers grown by CVD and LPE

K.V Vassilevski, G Constantinidis, N Papanicolaou, N Martin, K Zekentes

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 91 KB

english, 1999

83

Shallow and deep donors in transport properties of N-implanted 6H-SiC

P. Thomas, S. Contreras, J.L. Robert, W. Zawadzki, J. Gimbert, T. Billon

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

84

GaN: from fundamentals to applications

Jacques I Pankove

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 129 KB

english, 1999

85

Industrial aspects of GaN/SiC blue light emitting diodes in Europe

V Härle, N Hiller, S Kugler, B Hahn, N Stath

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 269 KB

english, 1999

86

High temperature CVD systems to grow GaN or SiC based structures

R Beccard, D Schmitz, E.G Woelk, G Strauch, Y Makarov, M Heuken, M Deschler, H Juergensen

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 280 KB

english, 1999

87

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

E Danielsson, C.-M Zetterling, M Östling, B Breitholtz, K Linthicum, D.B Thomson, O.-H Nam, R.F Davis

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

88

Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE

I. Nikitina, G. Mosina, Yu. Melnik, A. Nikolaev, K. Vassilevski

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 726 KB

english, 1999

89

SiC power devices for high voltage applications

K Rottner, M Frischholz, T Myrtveit, D Mou, K Nordgren, A Henry, C Hallin, U Gustafsson, A Schöner

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 650 KB

english, 1999

90

Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

O Noblanc, C Arnodo, C Dua, E Chartier, C Brylinski

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 226 KB

english, 1999

91

Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth

D Schulz, G Wagner, J Doerschel, J Dolle, W Eiserbeck, T Muller, H.-J Rost, D Siche, J Wollweber

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 587 KB

english, 1999

92

Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

D.J Morrison, K.P Hilton, M.J Uren, N.G Wright, C.M Johnson, A.G O’Neill

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 94 KB

english, 1999

93

Effects of surface defects on the performance of 4H– and 6H–SiC pn junction diodes

Tsunenobu Kimoto, Nao Miyamoto, Hiroyuki Matsunami

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 218 KB

english, 1999

94

Annealing and recrystallization of amorphous silicon carbide produced by ion implantation

A Höfgen, V Heera, F Eichhorn, W Skorupa, W Möller

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 102 KB

english, 1999

95

Crystallization and surface erosion of SiC by ion irradiation at 500°C

V Heera, J Stoemenos, R Kögler, M Voelskow, W Skorupa

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

96

Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H–SiC

D Panknin, H Wirth, A Mücklich, W Skorupa

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.25 MB

english, 1999

97

Nitrogen implantation in 4H and 6H–SiC

J. Gimbert, T. Billon, T. Ouisse, J. Grisolia, G. Ben-Assayag, C. Jaussaud

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 182 KB

english, 1999

98

Lateral spread of implanted ion distributions in 6HSiC: simulation

E. Morvan, N. Mestres, J. Pascual, D. Flores, M. Vellvehi, J. Rebollo

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 240 KB

english, 1999

99

Ion implantation induced defects in epitaxial 4H–SiC

A Hallén, A Henry, P Pellegrino, B.G Svensson, D Åberg

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 104 KB

english, 1999

100

Deep level defects in H+ implanted 6H–SiC epilayers and in silicon carbide on insulator structures

E. Hugonnard-Bruyère, V. Lauer, G. Guillot, C. Jaussaud

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 214 KB

english, 1999

101

Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates

A Schöner, S Karlsson, T Schmitt, N Nordell, M Linnarsson, K Rottner

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 184 KB

english, 1999

102

Electrical characterization of inhomogeneous Ti/4H–SiC Schottky contacts

D Defives, O Noblanc, C Dua, C Brylinski, M Barthula, F Meyer

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 355 KB

english, 1999

103

Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes

A.S Royet, T Ouisse, T Billon, C Jaussaud, B Cabon

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

104

Improvements in Pt-based Schottky contacts to 3C–SiC

G Constantinidis, B Pecz, K Tsagaraki, M Kayambaki, K Michelakis

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 517 KB

english, 1999

105

Optimisation of a power 4H–SiC SIT device for RF heating applications

S Ortolland, C.M Johnson, N.G Wright, D.J Morrison, A.G O’Neill

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 143 KB

english, 1999

106

Numerical simulation of implanted top-gate 6H–SiC JFET characteristics

M Lades, D Berz, U Schmid, S.T Sheppard, N Kaminski, W Wondrak, G Wachutka

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 162 KB

english, 1999

107

The potential performance of wide bandgap microwave power MESFETs

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

108

P–N Junction creation in 6H-SiC by aluminum implantation

L Ottaviani, M.L Locatelli, D Planson, K Isoird, J.P Chante, E Morvan, P Godignon

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 188 KB

english, 1999

109

On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction

Gh Brezeanu, M Badila, B Tudor, J Millan, P Godignon, J.P Chante, M.L Locatelli, A Lebedev, V Banu

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

110

Current–voltage characteristics of large area 6H-SiC pin diodes

M Badila, B Tudor, Gh Brezeanu, M.L Locatelli, J.P Chante, J Millan, Ph Godignon, A Lebedev, V Banu

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 157 KB

english, 1999

111

Thermal injection current in 3C-SiC pn structures

A.M Strel’chuk, V.S Kiselev, S.F Avramenko

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

112

Influence of proton irradiation on recombination current in 6H–SiC pn structures

A.M Strel'chuk, V.V Kozlovski, N.S Savkina, M.G Rastegaeva, A.N Andreev

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 133 KB

english, 1999

113

Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

V Dmitriev, S Rendakova, N Kuznetsov, N Savkina, A Andreev, M Rastegaeva, M Mynbaeva, A Morozov

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 607 KB

english, 1999

114

Studies of the effect of proton irradiation on 6H-SiC pn junction properties

Alexandre A. Lebedev, Anatoly M. Strel’chuk, Vitali V. Kozlovski, Natalia.S. Savkina, Denis V. Davydov, Viktor V. Solov’ev

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 90 KB

english, 1999

115

Oxygen in silicon carbide: shallow donors and deep acceptors

Thomas Dalibor, Hubert Trageser, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami, Daniel Nizhner, Oleg Shigiltchoff, Wolfgang J. Choyke

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 183 KB

english, 1999

116

Quality and reliability of wet and dry oxides on n-type 4H-SiC

Carl J Anthony, Allan J Jones, Michael J Uren

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 133 KB

english, 1999

117

Structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation

T.S Sudarshan, S Soloviev, I Khlebnikov, V Madangarli

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

118

Mechanistic model for oxidation of SiC

N.G Wright, C.M Johnson, A.G O’Neill

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 94 KB

english, 1999

119

H2 surface treatment for gate-oxidation of SiC metal-oxide-semiconductor field effect transisitsors

Katsunori Ueno, Ryuichi Asai, Takashi Tsuji

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 105 KB

english, 1999

120

A study about the wet oxidation of crystalline and ion damaged 6H-SiC

R Nipoti, M Madrigali, A Sambo

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 123 KB

english, 1999

121

γ-Ray irradiation effects on 6H-SiC MOSFET

Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Yasushi Aoki, Isamu Nashiyama

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 113 KB

english, 1999

122

Editorial

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 47 KB

english, 1999

123

Index

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 90 KB

english, 1999

124

Index

Journal:

Materials Science and Engineering: B

Year:

1999

File:

PDF, 40 KB

1999

125

Surfactant-mediated MBE growth of β-SiC on Si substrates

K Zekentes, K Tsagaraki

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.22 MB

english, 1999

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