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Design of a 600 V silicon carbide vertical power MOSFET
D Planson, M.L Locatelli, F Lanois, J.P ChanteVolume:
61-62
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(98)00461-9
File:
PDF, 214 KB
english, 1999