Effects of RF power and annealing on the electrical and...

Materials Science and Engineering: B 2000 Vol. 72; Iss. 2-3

Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide films

W.K. Choi, N.B. Chong, L.S. Tan, L.J. Han
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Volume:
72
Year:
2000
Language:
english
Pages:
3
DOI:
10.1016/s0921-5107(99)00486-9
File:
PDF, 87 KB
english, 2000
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