Formation of Si islands in the buried oxide layers of...

Materials Science and Engineering: B 2000 Vol. 72; Iss. 2-3

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Jun Jiao, Benedict Johnson, Supapan Seraphin, Maria J Anc, Robert P Dolan, Bernhard F Cordts
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Volume:
72
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0921-5107(99)00493-6
File:
PDF, 481 KB
english, 2000
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