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A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates
M. Eickhoff, H. Möller, G. Kroetz, J. v. Berg, R. ZiermannVolume:
74
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0924-4247(98)00302-1
File:
PDF, 3.15 MB
english, 1999