Effect of Reduced Extended Defect Density in MOCVD Grown...

IEEE Electron Device Letters 2016 / 1 Vol. 37; Iss. 1

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Greenlee, Jordan D., Koehler, Andrew D., Hobart, Karl D., Kub, Fritz J.
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Volume:
37
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2502221
Date:
January, 2016
File:
PDF, 1.42 MB
english, 2016
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