IEEE Electron Device Letters

1

Theoretical and Experimental Investigation of Graphene/High- $\kappa $ /p-Si Junctions

Shim, Jaewoo, Yoo, Gwangwe, Kang, Dong-Ho, Jung, Woo-Shik, Byun, Young-Chul, Kim, Hyoungsub, Kang, Won Tae, Yu, Woo Jong, Yu, Hyun-Yong, Park, Yongkook, Park, Jin-Hong

Journal:

Year:

2016

Language:

english

File:

PDF, 926 KB

english, 2016

2

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Xu, Hua, Xu, Miao, Chen, Zikai, Li, Min, Zou, Jianhua, Tao, Hong, Wang, Lei, Peng, Junbiao

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 570 KB

english, 2016

3

Investigation of a Reliable Ohmic Contact to n-Type ZnO Thin Films Prepared by Sol–Gel Method

Eslami Jahromi, Khalil, Majles Ara, Mohammad Hossein, Mousavi, Seyedeh Soraya, Efafi, Babak

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 846 KB

english, 2016

4

Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric

Li, Chen-Chien, Chang-Liao, Kuei-Shu, Chi, Wei-Fong, Li, Mong-Chi, Chen, Ting-Chun, Su, Tzu-Hsiang, Chang, Yu-Wei, Tsai, Chia-Chi, Liu, Li-Jung, Fu, Chung-Hao, Lu, Chun-Chang

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 2.75 MB

english, 2016

5

High-Performance Al–Sn–Zn–O Thin-Film Transistor With a Quasi-Double-Channel Structure

Cong, Yingying, Han, Dedong, Zhou, Xiaoliang, Huang, Lingling, Shi, Pan, Yu, Wen, Zhang, Yi, Zhang, Shengdong, Zhang, Xing, Wang, Yi

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 976 KB

english, 2016

6

Novel Hybrid Bonding Technology Using Ultra-High Density Cu Nano-Pillar for Exascale 2.5D/3D Integration

Lee, Kangwook, Bea, Jichel, Fukushima, Takafumi, Ramalingam, Suresh, Wu, Xin, Tanaka, Tetsu, Koyanagi, Mitsumasa

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 726 KB

english, 2016

7

Suppression of Current Collapse in Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors

Wang, Chih-Hao, Ho, Shin-Yi, Huang, Jian Jang

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.17 MB

english, 2016

8

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

Tsou, Chuan-Wei, Wei, Kai-Pin, Lian, Yi-Wei, Hsu, Shawn S. H.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.14 MB

english, 2016

9

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

Hsu, Chung-Chun, Tsai, Yi-He, Chen, Che-Wei, Li, Jyun-Han, Lin, Yu-Hsien, Lee, Yao-Jen, Luo, Guang-Li, Chien, Chao-Hsin

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.16 MB

english, 2016

10

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Greenlee, Jordan D., Koehler, Andrew D., Hobart, Karl D., Kub, Fritz J.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.42 MB

english, 2016

11

Can Homojunction Tunnel FETs Scale Below 10 nm?

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.89 MB

english, 2016

12

Trap Kinetics in Solution-Processed Organic Thin-Film Transistors

Singh, Subhash, Mohapatra, Y. N.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 802 KB

english, 2016

13

Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

Long, Pengyu, Wilson, Evan, Huang, Jun Z., Klimeck, Gerhard, Rodwell, Mark J. W., Povolotskyi, Michael

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.29 MB

english, 2016

14

The Impact of Self-Heating on Charge Trapping in High- $k$ -Metal-Gate nFETs

Khan, Faraz, Cartier, Eduard, Kothandaraman, Chandrasekara, Scott, J. Campbell, Woo, Jason C. S., Iyer, Subramanian S.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 947 KB

english, 2016

15

A Humidity-Insensitive NO2 Gas Sensor With High Selectivity

Pan, Xiaofang, Zhao, Xiaojin, Bermak, Amine, Fan, Zhiyong

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.21 MB

english, 2016

16

Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

Ko, Jong Beom, Yeom, Hye In, Park, Sang-Hee Ko

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 480 KB

english, 2016

17

Changes to the Editorial Board

Liu, Tsu-Jae King

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 270 KB

english, 2016

18

Flexible Complementary Oxide–Semiconductor-Based Circuits Employing n-Channel ZnO and p-Channel SnO Thin-Film Transistors

Li, Yun-Shiuan, He, Jyun-Ci, Hsu, Shu-Ming, Lee, Cheng-Che, Su, Dung-Yue, Tsai, Feng-Yu, Cheng, I-Chun

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 708 KB

english, 2016

19

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 1.61 MB

2016

20