High-performance logic transistor DC benchmarking toward...

Solid-State Electronics 2016 / 02 Vol. 116

High-performance logic transistor DC benchmarking toward 7nm technology-node between III–V and Si tri-gate n-MOSFETs using virtual-source injection velocity model

Baek, Rock-Hyun, Kim, Jin Su, Kim, Do-Kywn, Kim, Taewoo, Kim, Dae-Hyun
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Volume:
116
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.11.031
Date:
February, 2016
File:
PDF, 646 KB
english, 2016
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